摘要:
In a method for testing integrity of signals transmitted from hard disk interfaces using a computing device, the computing device connects to an oscilloscope and a mechanical arm that is equipped with a test fixture. The mechanical arm controls the test fixture to make contact with one of the hard disk interfaces to be tested. The method adjusts an intensity grade of the signals through the hard disk interface, and controls the hard disk interface to produce a signal corresponding to the adjusted intensity grade. The test fixture obtains the signal from the hard disk interface, and the oscilloscope measures one or more test parameters of the signal. The method analyzes values of the test parameters to find an optimal signal, determines an intensity grade of the optimal signal as a driving parameter of the hard disk interface, and generates a test report of the hard disk interfaces.
摘要:
A charge pump circuit includes an input end, a first reservoir capacitor, a second reservoir capacitor, a first output end, a second output end, and a charge pump unit. The input end is utilized for receiving an input voltage. The charge pump unit includes a first flying capacitor, a second capacitor, a plurality of switches, and a control unit. The control unit is utilized for controlling on/off state of the plurality of switches so that the first flying capacitor provides a positive charge pump voltage to the first output end or a negative charge pump voltage to the second output and the second flying capacitor provides a positive charge pump voltage to the first output end through charge and discharge process.
摘要:
A FinFET transistor on SOI device and method of fabrication is provided. At least two FinFET fins each having an upper poly-silicate glass portion and a lower silicon portion are formed using spacer patterning technology. Each fin is formed on a sacrificial SiN mask layer having a sacrificial support structure. The SiN mask is removed and then a breakthrough etch is applied to remove an underlying pad oxide layer. A PSG layer defining a width of each of the fins on a sidewall of each of the support structures is deposited on each of the support structures. At least two fins each having a narrow fin pitch of about 0.25 μm. are formed. The fins provide a seed layer for at least two selective epitaxially raised source and drain regions, wherein each raised source-drain associated with each fin are interconnected thus forming a source pad and a drain pad.
摘要:
A FinFET transistor on SOI device and method of fabrication is provided. At least two FinFET fins each having an upper poly-silicate glass portion and a lower silicon portion are formed using spacer patterning technology. Each fin is formed on a sacrificial SiN mask layer having a sacrificial support structure. The SiN mask is removed and then a breakthrough etch is applied to remove an underlying pad oxide layer. A PSG layer defining a width of each of the fins on a sidewall of each of the support structures is deposited on each of the support structures. At least two fins each having a narrow fin pitch of about 0.25 μm. are formed. The fins provide a seed layer for at least two selective epitaxially raised source and drain regions, wherein each raised source-drain associated with each fin are interconnected thus forming a source pad and a drain pad.
摘要:
Methods of calibrating and operating optical switches as well as optical switches in which the orientations of mirrors are measured and controlled using control light beams and position sensing detectors are described. The present invention may provide high resolution control of a plurality of mirrors in an optical switch and thus allow the optical switch to cross-connect a large number of input and output ports with a low insertion loss.
摘要:
A method for continuously monitoring and controlling the etch rates within integrated circuits of silicon nitride insulator layers and silicon nitride insulator structures in aqueous ortho-phosphoric acid (H3PO4) solutions. To practice the method of the present invention, there is first provided an etch bath chamber containing therein an aqueous ortho-phosphoric acid (H3PO4) solution. There is provided continuously from the etch bath chamber to a hydrometer cell a sample stream of the aqueous ortho-phosphoric acid (H3PO4) solution. The sample stream of the aqueous ortho-phosphoric acid (H3PO4) solution is analyzed continuously within the hydrometer cell to provide a continuous specific gravity analysis of the sample stream of the aqueous ortho-phosphoric acid (H3PO4) solution. Finally, the continuous specific gravity analysis of the sample stream of the aqueous ortho-phosphoric acid (H3PO4) solution is employed to add intermittently to the aqueous ortho-phosphoric acid (H3PO4) solution a quantity of water sufficient to maintain a first water content of the aqueous ortho-phosphoric acid (H3PO4) solution within the etch bath chamber at a value greater than about 5 weight percent. Optionally, the continuous specific gravity analysis of the sample stream of the aqueous ortho-phosphoric acid (H3PO4) solution may also be simultaneously employed to add intermittently to the aqueous ortho-phosphoric acid (H3PO4) solution a quantity of heat sufficient to maintain a second water content of the aqueous ortho-phosphoric acid (H3PO4) solution within the etch bath at a value less than about 20 weight percent. The present invention also discloses the hydrometer cell and an automated etch bath chamber which are employed in practicing the method of the present invention.
摘要翻译:一种用于在正磷酸(H 3 PO 4)水溶液中连续监测和控制氮化硅绝缘体层和氮化硅绝缘体结构的集成电路内的蚀刻速率的方法。 为了实施本发明的方法,首先提供了含有正磷酸(H 3 PO 4)水溶液的蚀刻浴室。 从蚀刻槽室向比重计单元连续提供原磷酸水溶液(H 3 PO 4)溶液的样品流。 在比重计单元内连续分析正磷酸水溶液(H 3 PO 4)溶液的样品流,以对原磷酸(H 3 PO 4)水溶液的样品流进行连续比重分析。 最后,使用邻磷酸(H 3 PO 4)水溶液的样品流的连续比重分析,向邻磷酸(H 3 PO 4)水溶液间歇地添加一定量的足以维持第一含水量的水 蚀刻浴室内的正磷酸(H 3 PO 4)水溶液,其值大于约5重量%。 任选地,也可以同时使用邻磷酸(H 3 PO 4)水溶液的样品流的连续比重分析来向正磷酸(H 3 PO 4)水溶液间歇地添加一定量的足以维持第二 在蚀刻槽内的正磷酸(H 3 PO 4)水溶液的含水量小于约20重量%。 本发明还公开了在实施本发明的方法中使用的比重计单元和自动蚀刻浴腔。
摘要:
Two optical beams of different frequencies are focussed as concentric spots, one spot being larger than the other, on a reflective surface whose roughness is to be measured. The smaller spot has a maximum dimension that is smaller than any significant deviation of the profile of the surface from spatial uniformity, and the larger spot has a minimum dimension that is larger than any significant deviation of the surface profile from spatial uniformity. The two beams are reflected from the surface along a common path with a phase difference that is measured by a heterodyne interferometric technique. The phase difference measurement is indicative of the roughness of the surface, and is substantially insensitive to vibration of the surface.
摘要:
A sensor for measuring angular deviations of a radiation beam relative to a reference plane. The sensor comprises a shearing interferometer block formed of a beamsplitter cube having a first reflecting device on one face of the cube for forming a first exit beam and a second reflecting device on the opposite face of the cube for forming a second exit beam. The first device can be a corner cube or a flat block mirror. The second device can be a right angle prism for one dimensional measurements and a 90.degree. pyramid prism for two-dimensional measurements. A photo-detector unit is adjacent to and spaced from the beam splitter cube and has a number of detector members across the path of travel of the wavefronts of the exit beams. The detector members provide output signals which can be used to calculate the angular deviation of the incoming beam from a normal to the reference plane. The optical path difference between the two arms of the interferometer block are equal substantially to odd multiples of one-fourth the wavelength of the incoming radiation. The sensor is accurate to better than 0.001 arc seconds of angular measurements for a photodetector unit whose maximum transverse dimension is 2.5 cm.
摘要:
The disclosed heterodyne measurement apparatus utilizes a single coherent light source to simultaneously measure the location of a number of points on a surface. The coherent light is split into two parts by a Bragg Cell. One part, after being spatially split into a plurality of beams by a second Bragg Cell, fed to a plurality of reflectors on the surface, and recombined by the second Bragg Cell, is heterodyned with the second part. The heterodyned signal is fed to a photodetector and further processed to produce a signal representative to the distance to the points of interest on the surface.
摘要:
A cleaning sachet for removing carbon deposit and rust on a gun element, and a cleaning method thereof, uses cleaning powder that includes aluminum oxide making up 75.000% to 99.989% by weight of the cleaning powder, zinc peroxide making up 0.010% to 9.000% by weight of the cleaning powder, and nano zinc oxide making up 0.001% to 6.000% by weight of the cleaning powder. A user can lay the cleaning sachet on a carbon-deposited and/or rusting area of the gun element before or after moistening the cleaning sachet with a lubricating oil, and then wipe the carbon-deposited and/or rusting area with the cleaning sachet after waiting a period of time. Therefore, the colloidal solution formed by mixing the lubricating oil and the cleaning powder and released out of the cleaning sachet can remove the carbon deposit and/or rust on the surface of the gun element.