发明授权
US08168352B2 Reflective mask blank for EUV lithography and mask for EUV lithography
有权
用于EUV光刻的反射掩模板和用于EUV光刻的掩模
- 专利标题： Reflective mask blank for EUV lithography and mask for EUV lithography
- 专利标题（中）： 用于EUV光刻的反射掩模板和用于EUV光刻的掩模
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申请号： US13004081申请日： 2011-01-11
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公开(公告)号： US08168352B2公开(公告)日： 2012-05-01
- 发明人: Kazuyuki Hayashi , Toshiyuki Uno , Ken Ebihara
- 申请人： Kazuyuki Hayashi , Toshiyuki Uno , Ken Ebihara
- 申请人地址： JP Tokyo
- 专利权人： Asahi Glass Company, Limited
- 当前专利权人： Asahi Glass Company, Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-182439 20080714
- 主分类号： G03F1/00
- IPC分类号： G03F1/00
摘要：
Provision of an EUV mask whereby an influence of reflected light from a region outside a mask pattern region is suppressed, and an EUV mask blank to be employed for production of such an EUV mask.A reflective mask for EUV lithography (EUVL), comprising a substrate having a mask pattern region and an EUV light-absorbing region located outside the mask pattern region; a reflective layer provided on the mask pattern region of the substrate for reflecting EUV light and having a portion on which an absorber layer is present and a portion on which no absorber layer is present; the portion on which an absorber layer is present and the portion on which no absorber layer is present being arranged so as to constitute a mask pattern; wherein the reflectivity of a surface of the absorber layer for EUV light is from 5 to 15% and the reflectivity of a surface of the EUV light-absorbing region for EUV light is at most 1%.