Invention Grant
- Patent Title: Method of isolating nanowires from a substrate
- Patent Title (中): 从衬底分离纳米线的方法
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Application No.: US12346554Application Date: 2008-12-30
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Publication No.: US08168508B2Publication Date: 2012-05-01
- Inventor: Benjamin Chu-Kung , Uday Shah , Ravi Pillarisetty , Been-Yih Jin , Marko Radosavljevic , Willy Rachmady
- Applicant: Benjamin Chu-Kung , Uday Shah , Ravi Pillarisetty , Been-Yih Jin , Marko Radosavljevic , Willy Rachmady
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Winkle, PLLC
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method is provided. The method includes forming a plurality of nanowires on a top surface of a substrate and forming an oxide layer adjacent to a bottom surface of each of the plurality of nanowires, wherein the oxide layer is to isolate each of the plurality of nanowires from the substrate.
Public/Granted literature
- US20100163838A1 METHOD OF ISOLATING NANOWIRES FROM A SUBSTRATE Public/Granted day:2010-07-01
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