Invention Grant
US08168509B2 Etching methods and methods of manufacturing a CMOS image sensor using the same
有权
使用其制造CMOS图像传感器的蚀刻方法和方法
- Patent Title: Etching methods and methods of manufacturing a CMOS image sensor using the same
- Patent Title (中): 使用其制造CMOS图像传感器的蚀刻方法和方法
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Application No.: US12959995Application Date: 2010-12-03
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Publication No.: US08168509B2Publication Date: 2012-05-01
- Inventor: Ki-Hyung Ko , Byoung-Moon Yoon , Won-Jun Lee , Joon-Sang Park , Jun-Youl Yang , Seung-Ho Park , Myung-Jung Pyo
- Applicant: Ki-Hyung Ko , Byoung-Moon Yoon , Won-Jun Lee , Joon-Sang Park , Jun-Youl Yang , Seung-Ho Park , Myung-Jung Pyo
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2009-0120251 20091207
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
In an etching method, a thin layer is formed on a first surface of a first substrate doped with first impurities having a first doping concentration. The thin layer is doped with second impurities having a second doping concentration lower than the first doping concentration. A second substrate is formed on the thin layer. A second surface of the first substrate is polished. The polished first substrate is cleaned using a cleaning solution including ammonia and deionized water. The cleaned first substrate is etched to expose the thin layer.
Public/Granted literature
- US20110136290A1 ETCHING METHODS AND METHODS OF MANUFACTURING A CMOS IMAGE SENSOR USING THE SAME Public/Granted day:2011-06-09
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