发明授权
US08168535B2 Method fabricating semiconductor device using multiple polishing processes
有权
使用多次抛光工艺制造半导体器件的方法
- 专利标题： Method fabricating semiconductor device using multiple polishing processes
- 专利标题（中）： 使用多次抛光工艺制造半导体器件的方法
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申请号： US13084657申请日： 2011-04-12
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公开(公告)号： US08168535B2公开(公告)日： 2012-05-01
- 发明人: Jun-Soo Bae , Suk-Hun Choi , Won-Jun Lee , Joon-Sang Park
- 申请人： Jun-Soo Bae , Suk-Hun Choi , Won-Jun Lee , Joon-Sang Park
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2010-0055667 20100611
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method of fabricating a phase change memory device includes the use of first, second and third polishing processes. The first polishing process forms a first contact portion using a first sacrificial layer and the second polishing process forms a phase change material pattern using a second sacrificial layer. After removing the first and second sacrificial layers to expose resultant protruding structures of the first contact portion and the phase change material pattern, a third polishing process is used to polish the resultant protruding structures using an insulation layer as a polishing stopper layer.
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