Invention Grant
- Patent Title: Semiconductor device using graphene and method of manufacturing the same
- Patent Title (中): 使用石墨烯的半导体器件及其制造方法
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Application No.: US12529501Application Date: 2008-02-27
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Publication No.: US08168964B2Publication Date: 2012-05-01
- Inventor: Hidefumi Hiura , Fumiyuki Nihei , Tetsuya Tada , Toshihiko Kanayama
- Applicant: Hidefumi Hiura , Fumiyuki Nihei , Tetsuya Tada , Toshihiko Kanayama
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-052887 20070302
- International Application: PCT/JP2008/053899 WO 20080227
- International Announcement: WO2008/108383 WO 20080912
- Main IPC: H01L29/167
- IPC: H01L29/167
Abstract:
A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layers are located on the same plane.
Public/Granted literature
- US20100102292A1 SEMICONDUCTOR DEVICE USING GRAPHENE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-04-29
Information query
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