公开(公告)号：US08980217B2

公开(公告)日：2015-03-17

申请号：US13995809

申请日：2011-11-25

申请人： Hidefumi Hiura ,  Kazuhito Tsukagoshi

发明人： Hidefumi Hiura ,  Kazuhito Tsukagoshi

IPC分类号： C01B31/02 ,  H01L21/02 ,  H01L29/16 ,  C01B31/04 ,  H01L29/66 ,  H01L29/786 ,  B82Y30/00 ,  B82Y40/00

CPC分类号： H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  H01L21/0237 ,  H01L21/02491 ,  H01L21/02573 ,  H01L21/02612 ,  H01L21/02656 ,  H01L29/1606 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78684 ,  Y10S977/775

摘要： Provided is a graphene substrate, which is manufactured by: bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and cooling the metal layer to precipitate the carbon in the metal layer as graphene on any substrate surface.

摘要翻译： 提供了一种石墨烯基材，其通过以下方法制造：使金属层与含碳层接触并加热金属层以将碳在含碳层中溶解到金属层中; 并且将金属层冷却以将金属层中的碳沉淀在任何基板表面上的石墨烯。

公开(公告)号：US20130272951A1

公开(公告)日：2013-10-17

申请号：US13995809

申请日：2011-11-25

申请人： Hidefumi Hiura ,  Kazuhito Tsukagoshi

发明人： Hidefumi Hiura ,  Kazuhito Tsukagoshi

IPC分类号： H01L21/02

CPC分类号： H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  H01L21/0237 ,  H01L21/02491 ,  H01L21/02573 ,  H01L21/02612 ,  H01L21/02656 ,  H01L29/1606 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78684 ,  Y10S977/775

摘要： Provided is a graphene substrate, which is manufactured by: bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and cooling the metal layer to precipitate the carbon in the metal layer as graphene on any substrate surface.

摘要翻译： 提供了一种石墨烯基材，其通过以下方法制造：使金属层与含碳层接触并加热金属层以将含碳层中的碳溶解到金属层中; 并且将金属层冷却以将金属层中的碳沉淀在任何基板表面上的石墨烯。

公开(公告)号：US06540972B1

公开(公告)日：2003-04-01

申请号：US09432610

申请日：1999-11-03

申请人： Hidefumi Hiura

发明人： Hidefumi Hiura

IPC分类号： C01B3104

CPC分类号： B82Y15/00 ,  C01B32/20 ,  Y10T428/218 ,  Y10T428/22 ,  Y10T428/24273 ,  Y10T428/24298 ,  Y10T428/24306 ,  Y10T428/24322 ,  Y10T428/24331 ,  Y10T428/30

摘要： A graphite having geometrically shaped holes limited to the top atomic layer such as circles, polygons and combinations thereof, and a method of preparing a graphite having geometrically shaped holes such as circles, polygons and combinations thereof where the geometrically shaped holes are limited to the top atomic layer.

摘要翻译： 具有限定于顶部原子层（例如圆形，多边形及其组合）的具有几何形状的孔的石墨，以及制备具有几何形状的孔的石墨的方法，例如圆形，多边形及其组合，其中几何形状的孔限于顶部 原子层

公开(公告)号：US6083624A

公开(公告)日：2000-07-04

申请号：US968430

申请日：1997-11-12

申请人： Hidefumi Hiura

发明人： Hidefumi Hiura

IPC分类号： B01J19/12 ,  C01B31/04 ,  G01Q60/00 ,  G01Q80/00 ,  G01Q90/00 ,  B32B9/00

CPC分类号： B82Y15/00 ,  C01B31/04 ,  Y10T428/218 ,  Y10T428/22 ,  Y10T428/24273 ,  Y10T428/24298 ,  Y10T428/24306 ,  Y10T428/24322 ,  Y10T428/24331 ,  Y10T428/30

摘要： A graphite having geometrically shaped holes limited to the top atomic layer such as circles, polygons and combinations thereof, and a method of preparing a graphite having geometrically shaped holes such as circles, polygons and combinations thereof where the geometrically shaped holes are limited to the top atomic layer.

公开(公告)号：US08698077B2

公开(公告)日：2014-04-15

申请号：US13704670

申请日：2011-06-22

申请人： Hidefumi Hiura ,  Kazuhito Tsukagoshi ,  Hisao Miyazaki

发明人： Hidefumi Hiura ,  Kazuhito Tsukagoshi ,  Hisao Miyazaki

IPC分类号： G01N23/225

CPC分类号： G01N23/225 ,  G01N23/2251 ,  G01N2223/61 ,  G01N2223/633

摘要： Provided is a versatile method of determining the number of layers of a two-dimensional atomic layer thin film as compared with conventional methods. An electron beam is radiated to a two-dimensional thin film atomic structure having an unknown number of layers to determine the number of layers based on an intensity of reflected electrons or secondary electrons generated thereby. In particular, this method is effective for determining the number of layers of graphene.

摘要翻译： 与常规方法相比，提供了确定二维原子层薄膜的层数的通用方法。 将电子束照射到具有未知数量层的二维薄膜原子结构，以基于由此产生的反射电子或二次电子的强度确定层数。 特别地，该方法对于确定石墨烯的层数是有效的。

公开(公告)号：US20120161098A1

公开(公告)日：2012-06-28

申请号：US13391104

申请日：2009-08-20

申请人： Hidefumi Hiura ,  Kazuhito Tsukagoshi

发明人： Hidefumi Hiura ,  Kazuhito Tsukagoshi

IPC分类号： H01L29/02 ,  B82Y99/00

CPC分类号： H01L29/1606 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B2204/04 ,  C23C16/0218 ,  C23C16/0281 ,  C23C16/26 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/0262 ,  H01L29/165 ,  H01L29/66431 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78684

摘要： A semiconductor device is provided which is produced from a high-quality and large-area graphene substrate and is capable of fully exhibiting superior electronic properties that graphene inherently has. The semiconductor device is capable of realizing increased operation speed, reduced power consumption, and higher degree of integration, and thus is capable of improving the reliability and productivity. Electrical short circuit between a graphene layer (4) and a metal catalyst layer for growth of graphene is prevented by causing the metal catalyst layer to be absorbed as a compound/alloyed layer 5 at the interface between a substrate (1) and an oxide layer (2).

摘要翻译： 提供一种半导体器件，其由高质量和大面积的石墨烯衬底制造，并且能够充分展现石墨烯固有地具有的优异的电子性能。 半导体器件能够实现增加的操作速度，降低的功耗和更高的集成度，从而能够提高可靠性和生产率。 通过使金属催化剂层作为化合物/合金化层5在衬底（1）和氧化物层之间的界面处被吸收，从而防止石墨烯层（4）和用于石墨烯生长的金属催化剂层之间的电短路 （2）。

公开(公告)号：US20100012923A1

公开(公告)日：2010-01-21

申请号：US11325547

申请日：2006-01-05

申请人： Hidefumi Hiura ,  Tetsuya Tada ,  Toshihiko Kanayama

发明人： Hidefumi Hiura ,  Tetsuya Tada ,  Toshihiko Kanayama

IPC分类号： H01L29/66

CPC分类号： H01L51/002 ,  B82Y10/00 ,  C01B25/42 ,  H01L51/0048

摘要： It is to provide a thermodynamically and chemically stable dopant material which can achieve controls of the pn conduction types, carrier density, and threshold value of gate voltage, and a manufacturing method thereof. Further, it is to provide an actually operable semiconductor device such as a transistor with an excellent high-speed operability and high-integration characteristic. Provided is a dopant material obtained by depositing, on a carbon nanotube, a donor with a smaller ionization potential than an intrinsic work function of the carbon nanotube or an acceptor with a larger electron affinity than the intrinsic work function of the carbon nanotube. The ionization potential of the donor in vacuum is desired to be 6.4 eV or less, and the electron affinity of the acceptor in vacuum to be 2.3 eV or more.

摘要翻译： 提供一种能够实现pn导电类型，载流子浓度和栅极电压阈值的控制的热力学和化学稳定的掺杂剂材料及其制造方法。 此外，提供具有优异的高速可操作性和高集成度特性的诸如晶体管的实际可操作的半导体器件。 提供了通过在碳纳米管上沉积具有比碳纳米管的固有功函数更小的电子给电子或具有比碳纳米管的固有功函数更大的电子亲和力的受主的给体获得的掺杂剂材料。 供体在真空中的电离电位希望为6.4eV或更低，并且受体在真空中的电子亲和力为2.3eV以上。

公开(公告)号：US06680411B2

公开(公告)日：2004-01-20

申请号：US10152730

申请日：2002-05-23

申请人： Toshihiko Kanayama ,  Hidefumi Hiura

发明人： Toshihiko Kanayama ,  Hidefumi Hiura

IPC分类号： C07F502

CPC分类号： B82Y30/00 ,  C07F5/027 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/2658 ,  Y10S977/70 ,  Y10S977/731 ,  Y10S977/788 ,  Y10S977/792 ,  Y10S977/841

摘要： A carborane supercluster consisting of carborane (C2B10H12) as its constituent unit expressed as a molecular formula C2mB10mH12m-x, where x is a positive integer (i.e., x=1, 2, 3, . . . ) and m is an integer greater than unity (i.e., m=2, 3, . . . ). The parameter x represents the count of removed or detached hydrogen atoms. The parameter a represents the count of the clusters linked together. To produce the supercluster, carborane (C2B10H12) is ionized in a reaction chamber to generate carborane ions and then, the carborane ions thus generated are successively reacted with the remaining neutral (i.e., non-ionized) carborane (C2B10H12), thereby generating the carborane supercluster. Preferably, the cluster of the carborane consists of at least two of o-carborane, m-carborane, and p-carborane.

摘要翻译： 由碳硼烷（C2B10H12）作为其构成单元的分子式C2mB10mH12m-x表示的碳硼烷超群集，其中x为正整数（即x = 1,2,3，...），m为大于 统一（即m = 2,3，...）。 参数x表示去除或分离的氢原子的数量。 参数a表示链接在一起的集群的计数。 为了生产超群集，将碳硼烷（C2B10H12）在反应室中电离以产生碳硼烷离子，然后由此产生的碳硼烷离子依次与剩余的中性（即未离子化的）碳硼烷（C2B10H12）反应，从而产生碳硼烷 超级集群 优选地，碳硼烷的簇由至少两个邻碳硼烷，间碳硼烷和对碳硼烷组成。

公开(公告)号：US5641466A

公开(公告)日：1997-06-24

申请号：US253168

申请日：1994-06-02

申请人： Thomas Ebbesen ,  Pulickel M. Ajayan ,  Hidefumi Hiura

发明人： Thomas Ebbesen ,  Pulickel M. Ajayan ,  Hidefumi Hiura

IPC分类号： C01B31/02 ,  D01F9/12 ,  C01B31/00

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B31/026 ,  D01F9/12 ,  C01B2202/36 ,  Y10S977/742 ,  Y10S977/845 ,  Y10S977/90

摘要： A mixture of carbon nanotubes and impurity carbon materials, which include carbon nanoparticles and may possibly include amorphous carbon, is purified into carbon nanotubes of high purity by utilizing a significant difference in oxidizability between the nanotubes and the nanoparticles. The mixture is pulverized and heated in the presence of an oxidizing agent at a temperature in the range from 600.degree. to 1000.degree. C. until the impurity carbon materials are oxidized and dissipated into gas phase. The nanotubes remain almost unoxidized except for loss of some lengths from the tube tips. It is suitable to perform the heating in air or oxygen.

摘要翻译： 通过利用纳米管和纳米颗粒之间的氧化性的显着差异，将碳纳米管和包含碳纳米颗粒并可能包括无定形碳的杂质碳材料的混合物纯化成高纯度的碳纳米管。 将混合物在氧化剂存在下，在600℃至1000℃的温度范围内粉碎和加热，直到杂质碳材料被氧化并消散为气相。 纳米管保持几乎未被氧化，除了从管尖的一些长度的损失。 适合在空气或氧气中进行加热。

公开(公告)号：US5626812A

公开(公告)日：1997-05-06

申请号：US465427

申请日：1995-06-05

申请人： Thomas Ebbesen ,  Hidefumi Hiura ,  Katsumi Tanigaki

发明人： Thomas Ebbesen ,  Hidefumi Hiura ,  Katsumi Tanigaki

IPC分类号： B82B3/00 ,  C01B31/04 ,  D01F9/12 ,  G01N27/00 ,  G01N37/00 ,  G01Q30/10 ,  G01Q60/00 ,  G01Q60/24 ,  G01Q80/00 ,  G11B9/00 ,  H01L29/16 ,  H01L51/00 ,  H01L51/30 ,  H01S5/10 ,  H01S5/34 ,  B29C53/04 ,  B29C53/36 ,  C01B31/02

CPC分类号： H01S5/341 ,  B82B3/00 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/04 ,  C01B31/0484 ,  D01F9/12 ,  G11B9/1463 ,  H01L29/16 ,  H01L29/1602 ,  H01L51/0046 ,  C01B2204/00 ,  C01B2204/02 ,  G01Q80/00 ,  G11B9/149 ,  H01L51/0048 ,  H01L51/0052 ,  H01S5/1042 ,  H01S5/3027 ,  Y10S977/70 ,  Y10S977/855 ,  Y10S977/858 ,  Y10T428/30

摘要： A novel carbon material is obtained by bending at least one carbon atom layer of graphite in at least one selected region along either, or both, of lines I and II in FIG. 1. The bending can be accomplished by scanningly picking the carbon atom layer(s) with a probe of an atomic force microscope or another scanning microscope. The obtained carbon material has at least one round bend having a width of 0.1-10 nm and at least one flap region having a triangular, rectangular or still differently polygonal shape in plan view. When the carbon atom layer(s) is bent with very small radii of curvature, a finely striped ridge-and-groove structure appears in the round bend. The physical properties of the obtained carbon material are uniquely determined by the direction(s) of bending, width of each bend, shape and size of each flap region and the stripe pitch of the ridge-and-groove structure.

摘要翻译： 通过在图1中的I和II线中的至少一个选择区域中弯曲至少一个石墨碳原子层获得新的碳材料。 弯曲可以通过用原子力显微镜或另一扫描显微镜的探针扫描地挑选碳原子层来实现。 所获得的碳材料具有至少一个具有0.1-10nm的宽度的圆形弯曲部，并且在平面图中具有至少一个具有三角形，矩形或仍然不同的多边形形状的折翼区域。 当碳原子层以非常小的曲率半径弯曲时，在圆形弯曲部中出现细微的条状的脊 - 沟结构。 所获得的碳材料的物理性质由弯曲方向，每个弯曲的宽度，每个翼片区域的形状和尺寸以及脊 - 沟结构的条间距唯一地确定。