发明授权
US08168980B2 Active matrix substrate, display device, television receiver, manufacturing method of active matrix substrate, forming method of gate insulating film
有权
有源矩阵基板，显示装置，电视接收机，有源矩阵基板的制造方法，栅极绝缘膜的形成方法
- 专利标题： Active matrix substrate, display device, television receiver, manufacturing method of active matrix substrate, forming method of gate insulating film
- 专利标题（中）： 有源矩阵基板，显示装置，电视接收机，有源矩阵基板的制造方法，栅极绝缘膜的形成方法
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申请号： US12162042申请日： 2006-11-07
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公开(公告)号： US08168980B2公开(公告)日： 2012-05-01
- 发明人: Toshihide Tsubata , Masanori Takeuchi
- 申请人： Toshihide Tsubata , Masanori Takeuchi
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Nixon & Vanderhye P.C.
- 优先权： JP2006-049363 20060224
- 国际申请： PCT/JP2006/322151 WO 20061107
- 国际公布： WO2007/097074 WO 20070830
- 主分类号： H01L29/15
- IPC分类号： H01L29/15
摘要：
In an active matrix substrate of the present invention, a gate insulating film for covering a gate electrode of each transistor has a thin portion, having a reduced film thickness, which is provided on a part overlapped on the gate electrode, and the thin portion is formed by using the gate electrode, on which the thin portion is overlapped, as a mask, and each transistor has a first drain electrode section and a second drain electrode section which are respectively provided on both sides of a source electrode, and the thin portion has two edges opposite to each other, and the first drain electrode section is overlapped on the one edge, and the second drain electrode section is overlapped on the other edge. This makes it possible to provide an active matrix substrate which realizes high display quality while suppressing unevenness of parasitic capacitances (particularly, Cgd) of TFTs in the active matrix substrate whose each TFT has a thin portion in its gate insulating film.
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