公开(公告)号：US08593582B2

公开(公告)日：2013-11-26

申请号：US13195095

申请日：2011-08-01

申请人： Ryuji Kurihara ,  Yuhko Hisada ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Tomokazu Ohtsubo

发明人： Ryuji Kurihara ,  Yuhko Hisada ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Tomokazu Ohtsubo

IPC分类号： G02F1/136

CPC分类号： G02F1/136213 ,  G02F1/136259

摘要： An active matrix substrate has a structure that prevents a drain extraction line from breaking without a plurality of active elements such as thin film transistor elements, metal-insulator-metal elements, MOS transistor elements, diodes, and varistors being disposed, and is suited for use in a large-size liquid crystal television or a like liquid crystal display device equipped with a large-size liquid crystal display panel. The active matrix substrate includes an active element connected, via a drain extraction line, to a storage capacitor upper electrode, wherein the drain extraction line has at least two routes.

摘要翻译： 有源矩阵基板具有防止漏极引出线断裂的结构，而不设置薄膜晶体管元件，金属 - 绝缘体 - 金属元件，MOS晶体管元件，二极管和变阻器等多个有源元件，并且适合于 用在配备有大尺寸液晶显示面板的大尺寸液晶电视机等液晶显示装置中。 有源矩阵基板包括经由漏极引出线连接到存储电容器上电极的有源元件，其中漏极引出线具有至少两条路径。

公开(公告)号：US08456583B2

公开(公告)日：2013-06-04

申请号：US12530560

申请日：2008-03-06

申请人： Fumikazu Shimoshikiryoh ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Masae Kitayama ,  Ikumi Itsumi ,  Akihiro Shohraku

发明人： Fumikazu Shimoshikiryoh ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Masae Kitayama ,  Ikumi Itsumi ,  Akihiro Shohraku

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213 ,  G02F2001/134345 ,  G09G3/3648 ,  G09G3/3659 ,  G09G2300/0443 ,  G09G2300/0447 ,  G09G2300/0876 ,  G09G2320/0233 ,  G09G2320/028

摘要： A liquid crystal display device according to the present invention includes: a plurality of pixels that are arranged in rows and columns so as to form a matrix pattern; and TFTs (TFT-A, TFT-B and TFT-C), source bus lines, gate bus lines and CS bus lines (CS-A and CS-B), which are associated with the respective pixels. Each pixel includes at least three subpixels (SP-A, SP-B and SP-C) with liquid crystal capacitors that are able to retain mutually different voltages. By supplying a signal (CS-A or CS-B) that makes two of the at least three subpixels display mutually different luminances at least at a certain grayscale tone from the source, gate and CS bus lines to each pixel, the at least three subpixels are able to display mutually different luminances.

摘要翻译： 根据本发明的液晶显示装置包括：排列成行和列以形成矩阵图案的多个像素; 和TFT（TFT-A，TFT-B和TFT-C），源极总线，栅极总线和CS总线（CS-A和CS-B）。 每个像素包括具有能够保持相互不同电压的液晶电容器的至少三个子像素（SP-A，SP-B和SP-C）。 通过提供使至少三个子像素中的两个至少以来自源，栅极和CS总线的某一灰度色调显示相互不同的亮度到每个像素的信号（CS-A或CS-B），至少三个 子像素能够显示相互不同的亮度。

公开(公告)号：US07903190B2

公开(公告)日：2011-03-08

申请号：US12847092

申请日：2010-07-30

申请人： Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

发明人： Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

IPC分类号： G02F1/1333

CPC分类号： G02F1/1309 ,  G02F1/134309 ,  G02F1/1368 ,  G02F2001/136263 ,  G02F2201/508

摘要： A liquid crystal display uses a pixel division method by which the size of a defect can be reduced much more than conventionally possible, and a defect correcting method for the liquid crystal display. The liquid crystal display is provided with an active matrix array substrate including a plurality of gate lines and a plurality of source lines arranged on a transparent substrate so as to intersect with each other, and a plurality of pixel electrodes arranged in a matrix, each pixel electrode including an assembly of a plurality of sub-pixel electrodes, separate TFTs respectively connected to the sub-pixel electrodes in the vicinity of an intersection portion of the gate line and the source line, the TFTs being driven by the common gate line and the common source line, and at least one opening portion being formed in a lower-layer side line placed in a lower layer at the intersection portion.

公开(公告)号：US07768584B2

公开(公告)日：2010-08-03

申请号：US12382799

申请日：2009-03-24

申请人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

发明人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213 ,  G02F1/136259

摘要： An active matrix substrate includes a substrate, a TFT formed on the substrate, a storage capacitor element formed on the substrate, an interlayer insulating film covering the storage capacitor element, and a pixel electrode formed on the interlayer insulating film. The storage capacitor element includes a storage capacitor line, an insulating film formed on the storage capacitor line, and two or more storage capacitor electrodes opposed to the storage capacitor line with the insulating film interposed therebetween. The two or more storage capacitor electrodes are electrically connected via associated contact holes formed in the interlayer insulating film to the pixel electrode and electrically continuous with a drain electrode of the TFT.

公开(公告)号：US07714948B2

公开(公告)日：2010-05-11

申请号：US11792563

申请日：2005-12-14

申请人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

发明人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213 ,  G02F1/136259

摘要： An active matrix substrate includes a substrate, a TFT formed on the substrate, a storage capacitor element formed on the substrate, an interlayer insulating film covering the storage capacitor element, and a pixel electrode formed on the interlayer insulating film. The storage capacitor element includes a storage capacitor line, an insulating film formed on the storage capacitor line, and two or more storage capacitor electrodes opposed to the storage capacitor line with the insulating film interposed therebetween. The two or more storage capacitor electrodes are electrically connected via associated contact holes formed in the interlayer insulating film to the pixel electrode and electrically continuous with a drain electrode of the TFT.

摘要翻译： 有源矩阵基板包括基板，形成在基板上的TFT，形成在基板上的辅助电容器元件，覆盖保持电容元件的层间绝缘膜，以及形成在层间绝缘膜上的像素电极。 存储电容器元件包括辅助电容线，形成在辅助电容线上的绝缘膜和与辅助电容线相对的两个或更多个保持电容电极，绝缘膜夹在它们之间。 两个以上的保持电容电极通过形成在层间绝缘膜中的相关联的接触孔电连接到像素电极，并与TFT的漏极电连接。

公开(公告)号：US20100053050A1

公开(公告)日：2010-03-04

申请号：US12461607

申请日：2009-08-18

申请人： Toshihide Tsubata ,  Morihide Ohsaki ,  Masanori Takeuchi

发明人： Toshihide Tsubata ,  Morihide Ohsaki ,  Masanori Takeuchi

IPC分类号： G09G3/36

CPC分类号： G02F1/136209 ,  G02F1/136227 ,  G02F1/136286

摘要： The display device substrate according to the present invention is arranged so that: a source line is provided on an area on which a pixel electrode is not provided, and a gap is provided between the source line and the pixel electrode, and a black matrix (light shielding film) which covers a surface of the source line overlaps with the pixel electrode. Thus, it is possible to prevent parasitic capacitance (Csd) between the pixel electrode and the source line from becoming uneven in a display area, so that it is possible to reduce display unevenness of a liquid crystal display device using the present display device substrate.

摘要翻译： 本发明的显示装置用基板，其特征在于，在未设置像素电极的区域上设置源极线，在源极线和像素电极之间设置有间隙，黑色矩阵 遮光膜）覆盖源极线的表面与像素电极重叠。 因此，可以防止像素电极和源极线之间的寄生电容（Csd）在显示区域中变得不均匀，使得可以减少使用本显示装置基板的液晶显示装置的显示不均匀性。

公开(公告)号：US07602358B2

公开(公告)日：2009-10-13

申请号：US10717917

申请日：2003-11-21

申请人： Toshihide Tsubata ,  Morihide Ohsaki ,  Masanori Takeuchi

发明人： Toshihide Tsubata ,  Morihide Ohsaki ,  Masanori Takeuchi

IPC分类号： G09G3/36

CPC分类号： G02F1/136209 ,  G02F1/136227 ,  G02F1/136286

摘要： The display device substrate according to the present invention is arranged so that: a source line is provided on an area on which a pixel electrode is not provided, and a gap is provided between the source line and the pixel electrode, and a black matrix (light shielding film) which covers a surface of the source line overlaps with the pixel electrode. Thus, it is possible to prevent parasitic capacitance (Csd) between the pixel electrode and the source line from becoming uneven in a display area, so that it is possible to reduce display unevenness of a liquid crystal display device using the present display device substrate.

公开(公告)号：US20090091676A1

公开(公告)日：2009-04-09

申请号：US12279029

申请日：2006-11-14

申请人： Masanori Takeuchi ,  Toshihide Tsubata

发明人： Masanori Takeuchi ,  Toshihide Tsubata

IPC分类号： H01L27/12 ,  G02F1/1368

CPC分类号： G02F1/136227 ,  G02F1/136204 ,  G02F1/136213

摘要： An active matrix substrate including, in each pixel area, a transistor, a pixel electrode (17), a conductive member (18) functioning as one of electrodes of a storage capacitor, a drain lead-out (7) electrode connected to a drain electrode of the transistor, and overlapping with the conductive member (18), and a contact hole for connecting the drain lead-out electrode (7) to the pixel electrode (17), includes a gate insulating film (40) covering a gate electrode of each transistor, the gate insulating film including a first thickness portion (41) overlapping with at least part of the contact hole, and a second thickness portion (42) formed adjacent to the first thickness portion, and overlapping with the drain lead-out electrode, the first thickness portion (41) having a greater thickness than the second thickness portion (42). This makes it possible to provide the active matrix substrate in which a short-circuit between the conductive member functioning as one of the electrodes of the storage capacitor, and the drain lead-out electrode (or the pixel electrode) is successfully prevented.

摘要翻译： 一种有源矩阵基板，在每个像素区域中包括晶体管，像素电极（17），用作存储电容器的电极之一的导电构件（18），连接到漏极的漏极引出（7）电极 电极，与导电构件（18）重叠，并且用于将漏极引出电极（7）连接到像素电极（17）的接触孔包括覆盖栅极电极（40）的栅极绝缘膜（40） 所述栅极绝缘膜包括与所述接触孔的至少一部分重叠的第一厚度部分（41）和与所述第一厚度部分相邻形成的第二厚度部分（42），并且与所述漏极引出区重叠 电极，第一厚度部分（41）的厚度大于第二厚度部分（42）。 这使得可以提供有源矩阵基板，其中成功地防止了用作存储电容器的电极之一的导电部件和漏极引出电极（或像素电极）之间的短路。

公开(公告)号：US20090057682A1

公开(公告)日：2009-03-05

申请号：US12162042

申请日：2006-11-07

申请人： Toshihide Tsubata ,  Masanori Takeuchi

发明人： Toshihide Tsubata ,  Masanori Takeuchi

IPC分类号： H01L33/00 ,  H01L21/28

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/78696

摘要： In an active matrix substrate of the present invention, a gate insulating film for covering a gate electrode of each transistor has a thin portion, having a reduced film thickness, which is provided on a part overlapped on the gate electrode, and the thin portion is formed by using the gate electrode, on which the thin portion is overlapped, as a mask, and each transistor has a first drain electrode section and a second drain electrode section which are respectively provided on both sides of a source electrode, and the thin portion has two edges opposite to each other, and the first drain electrode section is overlapped on the one edge, and the second drain electrode section is overlapped on the other edge. This makes it possible to provide an active matrix substrate which realizes high display quality while suppressing unevenness of parasitic capacitances (particularly, Cgd) of TFTs in the active matrix substrate whose each TFT has a thin portion in its gate insulating film.

摘要翻译： 在本发明的有源矩阵基板中，用于覆盖每个晶体管的栅电极的栅极绝缘膜具有设置在与栅电极重叠的部分上的膜厚减小的薄部分，薄部分是 通过使用其上重叠有薄层部分的栅电极作为掩模形成，并且每个晶体管具有分别设置在源电极两侧的第一漏电极部分和第二漏电极部分，并且薄部分 具有彼此相对的两个边缘，并且第一漏电极部分在一个边缘上重叠，并且第二漏电极部分在另一个边缘上重叠。 这使得可以提供实现高显示质量的有源矩阵基板，同时抑制每个TFT在其栅极绝缘膜中具有薄部分的有源矩阵基板中的TFT的寄生电容（特别是Cgd）的不均匀性。

公开(公告)号：US20080002076A1

公开(公告)日：2008-01-03

申请号：US11792563

申请日：2005-12-14

申请人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

发明人： Toshifumi Yagi ,  Tomoki Noda ,  Toshihide Tsubata ,  Masanori Takeuchi ,  Kenji Enda

IPC分类号： G02F1/1343 ,  H01L21/84

CPC分类号： G02F1/136213 ,  G02F1/136259

摘要： An active matrix substrate includes a substrate, a TFT formed on the substrate, a storage capacitor element formed on the substrate, an interlayer insulating film covering the storage capacitor element, and a pixel electrode formed on the interlayer insulating film. The storage capacitor element includes a storage capacitor line, an insulating film formed on the storage capacitor line, and two or more storage capacitor electrodes opposed to the storage capacitor line with the insulating film interposed therebetween. The two or more storage capacitor electrodes are electrically connected via associated contact holes formed in the interlayer insulating film to the pixel electrode and electrically continuous with a drain electrode of the TFT.

摘要翻译： 有源矩阵基板包括基板，形成在基板上的TFT，形成在基板上的辅助电容器元件，覆盖保持电容元件的层间绝缘膜，以及形成在层间绝缘膜上的像素电极。 存储电容器元件包括辅助电容线，形成在辅助电容线上的绝缘膜和与辅助电容线相对的两个或更多个保持电容电极，绝缘膜夹在它们之间。 两个以上的保持电容电极通过形成在层间绝缘膜中的相关联的接触孔电连接到像素电极，并与TFT的漏极电连接。