发明授权
- 专利标题: Semiconductor module including a switch and non-central diode
- 专利标题(中): 半导体模块包括开关和非中心二极管
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申请号: US12543779申请日: 2009-08-19
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公开(公告)号: US08168985B2公开(公告)日: 2012-05-01
- 发明人: Kiyoshi Arai , Gourab Majumdar
- 申请人: Kiyoshi Arai , Gourab Majumdar
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2008-302225 20081127
- 主分类号: H01L25/07
- IPC分类号: H01L25/07 ; H01L25/18 ; H01L29/12
摘要:
A semiconductor module having one or more silicon carbide diode elements mounted on a switching element is provided in which the temperature rise is reduced by properly disposing each of the diode elements on the switching element, to thereby provide a thermal dissipation path for the respective diode elements. The respective diode elements are arranged on a non-central portion of the switching element, to facilitate dissipation of the heat produced by each of the diode elements, whereby the temperature rise in the semiconductor module is reduced.
公开/授权文献
- US20100127277A1 SEMICONDUCTOR MODULE 公开/授权日:2010-05-27
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