发明授权
- 专利标题: Plasma generating apparatus
- 专利标题(中): 等离子体发生装置
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申请号: US12149450申请日: 2008-05-01
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公开(公告)号: US08169148B2公开(公告)日: 2012-05-01
- 发明人: Sang Jean Jeon , Yuri Tolmachev , Su Ho Lee , Seoung Hyun Seok , Young Min Park , Won Hyuk Jang
- 申请人: Sang Jean Jeon , Yuri Tolmachev , Su Ho Lee , Seoung Hyun Seok , Young Min Park , Won Hyuk Jang
- 申请人地址: KR Suwon-Si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si
- 代理机构: Staas & Halsey LLP
- 优先权: KR10-2007-0069061 20070710
- 主分类号: H01J7/24
- IPC分类号: H01J7/24
摘要:
A plasma generating apparatus having superior plasma generation efficiency that uses a single reaction chamber. The plasma generating apparatus includes a RF generator for providing a RF power, an antenna for generating an electromagnetic field upon receiving the RF power, a reaction chamber for exciting/ionizing a reaction gas via the electromagnetic field, and generating a plasma, and a plasma channel for absorbing the RF power, and allowing a current signal to be induced to the plasma.
公开/授权文献
- US20090015165A1 Plasma generating apparatus 公开/授权日:2009-01-15
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