发明授权
US08169825B1 Reliable data storage in analog memory cells subjected to long retention periods
有权
在长时间保留期间的模拟存储单元中的可靠数据存储
- 专利标题： Reliable data storage in analog memory cells subjected to long retention periods
- 专利标题（中）： 在长时间保留期间的模拟存储单元中的可靠数据存储
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申请号： US12551567申请日： 2009-09-01
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公开(公告)号： US08169825B1公开(公告)日： 2012-05-01
- 发明人: Ofir Shalvi , Naftali Sommer , Barak Rotbard , Oren Golov , Micha Anholt , Uri Perlmutter
- 申请人： Ofir Shalvi , Naftali Sommer , Barak Rotbard , Oren Golov , Micha Anholt , Uri Perlmutter
- 申请人地址： IL Herzliya
- 专利权人： Anobit Technologies Ltd.
- 当前专利权人： Anobit Technologies Ltd.
- 当前专利权人地址： IL Herzliya
- 代理机构： D. Kligler IP Services Ltd.
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A method for data storage in a non-volatile memory includes storing data in the non-volatile memory using a first storage configuration while the non-volatile memory is supplied with electrical power. After storing the data, an indication is accepted, indicating that shut-off of the electrical power is imminent. Responsively to the indication and before the shut-off, at least some of the data is re-programmed in the non-volatile memory using a second storage configuration.
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