Invention Grant
US08169825B1 Reliable data storage in analog memory cells subjected to long retention periods
有权
在长时间保留期间的模拟存储单元中的可靠数据存储
- Patent Title: Reliable data storage in analog memory cells subjected to long retention periods
- Patent Title (中): 在长时间保留期间的模拟存储单元中的可靠数据存储
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Application No.: US12551567Application Date: 2009-09-01
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Publication No.: US08169825B1Publication Date: 2012-05-01
- Inventor: Ofir Shalvi , Naftali Sommer , Barak Rotbard , Oren Golov , Micha Anholt , Uri Perlmutter
- Applicant: Ofir Shalvi , Naftali Sommer , Barak Rotbard , Oren Golov , Micha Anholt , Uri Perlmutter
- Applicant Address: IL Herzliya
- Assignee: Anobit Technologies Ltd.
- Current Assignee: Anobit Technologies Ltd.
- Current Assignee Address: IL Herzliya
- Agency: D. Kligler IP Services Ltd.
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A method for data storage in a non-volatile memory includes storing data in the non-volatile memory using a first storage configuration while the non-volatile memory is supplied with electrical power. After storing the data, an indication is accepted, indicating that shut-off of the electrical power is imminent. Responsively to the indication and before the shut-off, at least some of the data is re-programmed in the non-volatile memory using a second storage configuration.
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