Invention Grant
- Patent Title: Optically-pumped external-cavity surface-emitting semiconductor lasers with front-cooled gain-structures
- Patent Title (中): 具有前冷增益结构的光泵浦外腔表面发射半导体激光器
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Application No.: US12558315Application Date: 2009-09-11
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Publication No.: US08170073B2Publication Date: 2012-05-01
- Inventor: Sergei V. Govorkov , R. Russel Austin
- Applicant: Sergei V. Govorkov , R. Russel Austin
- Applicant Address: US CA Santa Clara
- Assignee: Coherent, Inc.
- Current Assignee: Coherent, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Morrison & Foerster LLP
- Main IPC: H01S3/04
- IPC: H01S3/04

Abstract:
A semiconductor gain-structure functions as a gain-element in a laser-resonator. The gain-structure is bonded to a diamond heat-spreader that is peripherally cooled by a heat-sink configured to allow access to the gain-structure by laser-radiation circulating in the laser-resonator. In one example, the gain-structure is used as a transmissive gain-structure in a traveling-wave ring-resonator. In another example, the gain-structure surmounts mirror-structure which functions as an end-mirror of a standing-wave laser-resonator.
Public/Granted literature
- US20110064099A1 OPTICALLY-PUMPED EXTERNAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR LASERS WITH FRONT-COOLED GAIN-STRUCTURES Public/Granted day:2011-03-17
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