Invention Grant
- Patent Title: Doped implant monitoring for microchip tamper detection
- Patent Title (中): 用于微芯片篡改检测的掺杂植入物监测
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Application No.: US12181401Application Date: 2008-07-29
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Publication No.: US08172140B2Publication Date: 2012-05-08
- Inventor: Gerald K Bartley , Darryl J. Becker , Todd A. Christensen , Paul E. Dahlen , Philip R. Germann , Andrew B. Maki , Mark O. Maxson , John E. Sheets, II
- Applicant: Gerald K Bartley , Darryl J. Becker , Todd A. Christensen , Paul E. Dahlen , Philip R. Germann , Andrew B. Maki , Mark O. Maxson , John E. Sheets, II
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Toler Law Group
- Main IPC: G06K7/08
- IPC: G06K7/08
Abstract:
A method and apparatus include conductive material doped within a microchip that accumulates a detectable charge in the presence of ions. Such ions may result from a focused ion beam or other unwelcome technology exploitation effort. Circuitry sensing the charge buildup in the embedded, doped material may initiate a defensive action intended to defeat the tampering operation.
Public/Granted literature
- US20100025479A1 Doped Implant Monitoring for Microchip Tamper Detection Public/Granted day:2010-02-04
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