发明授权
- 专利标题: Semiconductor light emitting device and method for manufacturing same
- 专利标题(中): 半导体发光器件及其制造方法
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申请号: US12575778申请日: 2009-10-08
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公开(公告)号: US08174027B2公开(公告)日: 2012-05-08
- 发明人: Akihiro Kojima , Yoshiaki Sugizaki
- 申请人: Akihiro Kojima , Yoshiaki Sugizaki
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2009-065646 20090318
- 主分类号: H01L27/15
- IPC分类号: H01L27/15 ; H01L29/26 ; H01L31/12 ; H01L33/00 ; H01L23/04
摘要:
A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface; a first electrode provided on the first major surface; a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode; a second electrode provided on the second major surface; and a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode.
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