Invention Grant
- Patent Title: CMOS image device with local impurity region
- Patent Title (中): 具有局部杂质区的CMOS图像器件
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Application No.: US12395757Application Date: 2009-03-02
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Publication No.: US08174057B2Publication Date: 2012-05-08
- Inventor: Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
- Applicant: Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2005-0053555 20050621
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113
Abstract:
According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.
Public/Granted literature
- US20090166696A1 CMOS Image Device with Local Impurity Region Public/Granted day:2009-07-02
Information query
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