- 专利标题： Multichip semiconductor device, chip therefor and method of formation thereof
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申请号： US12926104申请日： 2010-10-26
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公开(公告)号： US08174093B2公开(公告)日： 2012-05-08
- 发明人: Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
- 申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
- 申请人地址： JP Kawasaki-Shi
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Kawasaki-Shi
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP8-321931 19961202; JP9-305784 19971107; JP10-280225 19981001
- 主分类号： H01L29/40
- IPC分类号： H01L29/40
摘要：
A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
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