发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
-
申请号： US12956333申请日： 2010-11-30
-
公开(公告)号： US08174122B2公开(公告)日： 2012-05-08
- 发明人: Mari Amano , Munehiro Tada , Naoya Furutake , Yoshihiro Hayashi
- 申请人： Mari Amano , Munehiro Tada , Naoya Furutake , Yoshihiro Hayashi
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Young & Thompson
- 优先权： JP2005-182645 20050622
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A trench is formed in an insulation film formed on top of a semiconductor substrate, and a barrier metal film is formed on the surface of the trench. After a copper or copper alloy film is formed on the barrier metal film, an oxygen absorption film in which a standard energy of formation of an oxidation reaction in a range from room temperature to 400° C. is negative, and in which an absolute value of the standard energy of formation is larger than that of the barrier metal film is formed, and the assembly is heated in a temperature range of 200 to 400° C. A semiconductor device can thereby be provided that has highly reliable wiring, in which the adhesion to the barrier metal film in the copper interface is enhanced, copper diffusion in the interface is suppressed, and electromigration and stress migration are prevented.
公开/授权文献
- US20110068472A1 SEMICONDUCTOR DEVICE 公开/授权日：2011-03-24
信息查询
IPC分类:
