发明授权
- 专利标题: Techniques for reducing disturbance in a semiconductor device
- 专利标题(中): 用于减少半导体存储器件中的干扰的技术
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申请号: US12624856申请日: 2009-11-24
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公开(公告)号: US08174881B2公开(公告)日: 2012-05-08
- 发明人: Jungtae Kwon , David Kim , Sunil Bhardwaj
- 申请人: Jungtae Kwon , David Kim , Sunil Bhardwaj
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Wilmer Cutler Pickering Hale and Dorr LLP
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
Techniques for reducing disturbance in a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a semiconductor memory device having reduced disturbance. The semiconductor memory device may comprise a plurality of memory cells arranged in arrays of rows and columns. The semiconductor memory device may also comprise a plurality of data sense amplifiers, coupled to the plurality of memory cells, configured to perform one or more operations during an operation/access cycle, wherein the operation/access cycle may comprise an operation segment and a disturbance recovery segment.