发明授权
- 专利标题: Programming memory devices
- 专利标题(中): 编程存储器件
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申请号: US12703901申请日: 2010-02-11
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公开(公告)号: US08174889B2公开(公告)日: 2012-05-08
- 发明人: Dzung H. Nguyen , Benjamin Louie , Hagop A. Nazarian , Aaron Yip , Jin-Man Han
- 申请人: Dzung H. Nguyen , Benjamin Louie , Hagop A. Nazarian , Aaron Yip , Jin-Man Han
- 申请人地址: US NY Mt. Kisco
- 专利权人: Round Rock Research, LLC
- 当前专利权人: Round Rock Research, LLC
- 当前专利权人地址: US NY Mt. Kisco
- 代理机构: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
A target memory cell of a memory device is programmed by applying a programming voltage to a word line that includes the target memory cell, determining whether the target memory cell is programmed, and increasing the programming voltage by a step voltage if it is determined that the target memory cell is not programmed. An initial programming voltage and the step voltage are each selectable after fabrication of the memory device.
公开/授权文献
- US20100142280A1 PROGRAMMING MEMORY DEVICES 公开/授权日:2010-06-10