发明授权
US08174904B2 Memory array and method of operating one of a plurality of memory cells
有权
存储器阵列和操作多个存储器单元之一的方法
- 专利标题： Memory array and method of operating one of a plurality of memory cells
- 专利标题（中）： 存储器阵列和操作多个存储器单元之一的方法
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申请号： US12898691申请日： 2010-10-05
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公开(公告)号： US08174904B2公开(公告)日： 2012-05-08
- 发明人: Wen-Yi Hsieh , Ching-Chung Lin , Ken-Hui Chen , Chun-Hsiung Hung
- 申请人： Wen-Yi Hsieh , Ching-Chung Lin , Ken-Hui Chen , Chun-Hsiung Hung
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX International Co., Ltd.
- 当前专利权人： MACRONIX International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Jianq Chyun IP Office
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C16/04
摘要：
An embodiment of the invention provides a memory array including a plurality of bit lines, a plurality of memory cells and a device. Each of the plurality of memory cells has a first node, a second node and a third node, wherein the third node is coupled to one of the plurality of bit lines. The device couples the plurality of bit lines together to form a common node for one of the plurality of memory cells.
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