Invention Grant
- Patent Title: Photoresist composition and method of forming a resist pattern
- Patent Title (中): 光刻胶组合物和形成抗蚀剂图案的方法
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Application No.: US11677089Application Date: 2007-02-21
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Publication No.: US08178287B2Publication Date: 2012-05-15
- Inventor: Ching-Yu Chang
- Applicant: Ching-Yu Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/26
- IPC: G03F7/26 ; H01L21/027
Abstract:
A resist material utilized in photolithography patterning includes a first material, and a second material dispersed in the first material. The second material is capable of diffusing to a top surface of the resist material, and has an etch rate different from that of the first material.
Public/Granted literature
- US20080063976A1 Photoresist Composition and Method Of Forming A Resist Pattern Public/Granted day:2008-03-13
Information query
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