发明授权
- 专利标题： Charge trap type non-volatile memory device and method for fabricating the same
- 专利标题（中）： 电荷阱型非易失性存储器件及其制造方法
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申请号： US12432060申请日： 2009-04-29
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公开(公告)号： US08178918B2公开(公告)日： 2012-05-15
- 发明人: Cha-Deok Dong
- 申请人： Cha-Deok Dong
- 申请人地址： KR Incheon-si, Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Incheon-si, Gyeonggi-do
- 代理机构： Lowe Hauptman Ham & Berner LLP
- 优先权： KR10-2008-0074139 20080729
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
There is provided a charge trap type non-volatile memory device and a method for fabricating the same, the charge trap type non-volatile memory device including: a tunnel insulation layer formed over a substrate; a charge trap layer formed over the tunnel insulation layer, the charge trap layer including a charge trap polysilicon thin layer and a charge trap nitride-based layer; a charge barrier layer formed over the charge trap layer; a gate electrode formed over the charge barrier layer; and an oxide-based spacer formed over sidewalls of the charge trap layer and provided to isolate the charge trap layer.
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