Invention Grant
US08178973B2 Copper wire, method for fabricating the same, and thin film transistor substrate with the same
有权
铜线，其制造方法以及具有该铜线的薄膜晶体管基板
- Patent Title: Copper wire, method for fabricating the same, and thin film transistor substrate with the same
- Patent Title (中): 铜线，其制造方法以及具有该铜线的薄膜晶体管基板
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Application No.: US12314605Application Date: 2008-12-12
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Publication No.: US08178973B2Publication Date: 2012-05-15
- Inventor: Gyu Won Han , Dong Sun Kim , Won Joon Ho , Hee Jung Yang
- Applicant: Gyu Won Han , Dong Sun Kim , Won Joon Ho , Hee Jung Yang
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge LLP
- Priority: KR10-2007-0137386 20071226
- Main IPC: H01L33/40
- IPC: H01L33/40
Abstract:
The present invention relates to a copper wire in a semiconductor device in which a barrier layer is formed for improving adhesion of a copper wire without any additional fabricating step; a method for fabricating the same, and a flat panel display device with the same. The copper wire includes a barrier layer formed on an underlying structure, and a copper conductive layer on the barrier layer, wherein the barrier layer includes at least one of a Cu2O layer and a CuOxNy layer.
Public/Granted literature
- US20090166640A1 Copper wire, method for fabricating the same, and thin film transistor substrate with the same Public/Granted day:2009-07-02
Information query
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