公开(公告)号：US08178973B2

公开(公告)日：2012-05-15

申请号：US12314605

申请日：2008-12-12

申请人： Gyu Won Han ,  Dong Sun Kim ,  Won Joon Ho ,  Hee Jung Yang

发明人： Gyu Won Han ,  Dong Sun Kim ,  Won Joon Ho ,  Hee Jung Yang

IPC分类号： H01L33/40

CPC分类号： H01L23/53238 ,  H01L21/32051 ,  H01L21/76829 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T428/2958 ,  H01L2924/00

摘要： The present invention relates to a copper wire in a semiconductor device in which a barrier layer is formed for improving adhesion of a copper wire without any additional fabricating step; a method for fabricating the same, and a flat panel display device with the same. The copper wire includes a barrier layer formed on an underlying structure, and a copper conductive layer on the barrier layer, wherein the barrier layer includes at least one of a Cu2O layer and a CuOxNy layer.

摘要翻译： 本发明涉及一种半导体器件中的铜线，其中形成阻挡层以改善铜线的附着，而无需任何额外的制造步骤; 其制造方法和具有该方法的平板显示装置。 铜线包括形成在下面的结构上的阻挡层和阻挡层上的铜导电层，其中阻挡层包括Cu 2 O层和CuO x N y层中的至少一种。

公开(公告)号：US06498082B1

公开(公告)日：2002-12-24

申请号：US09643730

申请日：2000-08-23

申请人： Won-Joon Ho ,  Hyung-Sik Kim

发明人： Won-Joon Ho ,  Hyung-Sik Kim

IPC分类号： H01L213205

CPC分类号： H01L29/4925 ,  H01L21/28035 ,  H01L21/32055

摘要： A method of forming a polysilicon layer includes the steps of: loading a semiconductor substrate in a CVD reactor wherein a gate insulating layer is formed on the substrate; decompressing the reactor; depositing a first polysilicon layer on the substrate by flowing an SiH4 gas into the reactor; forming a plurality of Si—N bonds on the first polysilicon layer by maintaining atmospheric pressure of the reactor by filling the reactor with nitrogen gas; decompressing the reactor; and depositing a second polysilicon layer on the first polysilicon layer by flowing SiH4 gas into the reactor.

摘要翻译： 形成多晶硅层的方法包括以下步骤：将半导体衬底装载在CVD反应器中，其中栅极绝缘层形成在衬底上; 减压反应器; 通过使SiH 4气体流入反应器而在衬底上沉积第一多晶硅层; 通过用氮气填充反应器来保持反应器的大气压在第一多晶硅层上形成多个Si-N键; 减压反应器; 以及通过将SiH 4气体流入反应器而在第一多晶硅层上沉积第二多晶硅层。

公开(公告)号：US08384869B2

公开(公告)日：2013-02-26

申请号：US12980950

申请日：2010-12-29

申请人： Hee Jung Yang ,  Gyu Won Han ,  Jae Min Lee ,  Won Joon Ho ,  Hoon Ki Chang ,  Byeong Seo Kim

发明人： Hee Jung Yang ,  Gyu Won Han ,  Jae Min Lee ,  Won Joon Ho ,  Hoon Ki Chang ,  Byeong Seo Kim

IPC分类号： G02F1/1343

CPC分类号： G02F1/134363 ,  G02F1/13439 ,  G02F2001/134372

摘要： Disclosed is an LCD device comprising: a substrate; gate and data lines intersecting each other on the substrate; a thin film transistor at the intersection of the gate and data lines; a pixel electrode electrically connected with the thin film transistor; a common electrode forming an electric field with the pixel electrode; and a reflection control layer on at least one of the pixel electrode and common electrode. At this time, at least one electrode of the pixel electrode and common electrode is formed of the opaque metal material, to thereby improve black luminance and contrast ratio. Simultaneously, the reflection control layer is formed on the at least one electrode of the opaque metal material so that it is possible to adjust the reflectivity of external light, and to prevent the problem of rainbow-colored image.

摘要翻译： 公开了一种LCD装置，包括：基板; 栅极和数据线在衬底上彼此相交; 栅极和数据线交叉处的薄膜晶体管; 与薄膜晶体管电连接的像素电极; 与像素电极形成电场的公共电极; 以及在像素电极和公共电极中的至少一个上的反射控制层。 此时，像素电极和公共电极的至少一个电极由不透明金属材料形成，从而提高黑色亮度和对比度。 同时，反射控制层形成在不透明金属材料的至少一个电极上，使得可以调节外部光的反射率，并且防止彩虹色图像的问题。

公开(公告)号：US08183070B2

公开(公告)日：2012-05-22

申请号：US12271775

申请日：2008-11-14

申请人： Seok-Won Kim ,  Won-Joon Ho ,  Hyuk-Jin Kwon ,  Chang-Mo Yoo

发明人： Seok-Won Kim ,  Won-Joon Ho ,  Hyuk-Jin Kwon ,  Chang-Mo Yoo

IPC分类号： H01L33/00

CPC分类号： H01L27/124 ,  G02F1/1368 ,  G02F2001/136236 ,  G02F2201/40 ,  G03F7/40 ,  G03F7/427 ,  H01L27/1288

摘要： A method of fabricating an array substrate for a liquid crystal display device includes: forming an initial photoresist (PR) pattern on a metallic material layer; etching the metallic material layer using the initial PR pattern as an etching mask to form the data line and a metallic material pattern, wherein the initial PR pattern is disposed on the data line; performing a first ashing process onto the initial PR pattern to partially remove the initial PR pattern so as to form a first ashed PR pattern, the first ashed PR pattern having a smaller width and a smaller thickness than the initial PR pattern such that end portions of the data line are exposed by the first ashed PR pattern; etching the intrinsic amorphous silicon layer and the impurity-doped amorphous silicon layer by a first dry-etching process; forming a source electrode and a drain electrode on the substrate.

摘要翻译： 制造液晶显示装置阵列基板的方法包括：在金属材料层上形成初始光致抗蚀剂（PR）图案; 使用初始PR图案蚀刻金属材料层作为蚀刻掩模以形成数据线和金属材料图案，其中初始PR图案设置在数据线上; 对初始PR图案执行第一灰化处理以部分地去除初始PR图案以形成第一灰化PR图案，第一灰化PR图案具有比初始PR图案更小的宽度和更小的厚度， 数据线由第一个灰色PR图案曝光; 通过第一干蚀刻工艺蚀刻本征非晶硅层和杂质掺杂非晶硅层; 在基板上形成源电极和漏电极。

公开(公告)号：US07863658B2

公开(公告)日：2011-01-04

申请号：US11452296

申请日：2006-06-14

申请人： Won-Joon Ho ,  Kyung-Lak Lee

发明人： Won-Joon Ho ,  Kyung-Lak Lee

IPC分类号： H01L29/76

CPC分类号： H01L27/14603 ,  H01L27/14683 ,  H01L29/7851 ,  H01L29/7853 ,  H01L2924/0002 ,  H01L2924/00

摘要： There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with the active region, a blocking layer interposed between the active region and the gate electrode in which the blocking layer is formed on an intersection region of the active region and the gate electrode, and a metal contact electrically connected to the gate electrode, wherein the metal contact is not electrically connected to the active region by the blocking layer.

摘要翻译： 提供了CMOS图像传感器及其制造方法。 具有复位晶体管，选择晶体管，驱动晶体管和光电二极管的CMOS图像传感器包括线状的有源区，与有源区相交的驱动晶体管的栅电极，插入 在有源区和栅电极之间形成阻挡层，在有源区和栅电极的交叉区域上形成有与栅电极电连接的金属触点，其中金属触点不与活性区电连接 区域由阻挡层。

公开(公告)号：US20110086459A1

公开(公告)日：2011-04-14

申请号：US12970547

申请日：2010-12-16

申请人： Won-Joon Ho ,  Kyung-Lak Lee

发明人： Won-Joon Ho ,  Kyung-Lak Lee

IPC分类号： H01L31/18

CPC分类号： H01L27/14603 ,  H01L27/14683 ,  H01L29/7851 ,  H01L29/7853 ,  H01L2924/0002 ,  H01L2924/00

摘要： There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with the active region, a blocking layer interposed between the active region and the gate electrode in which the blocking layer is formed on an intersection region of the active region and the gate electrode, and a metal contact electrically connected to the gate electrode, wherein the metal contact is not electrically connected to the active region by the blocking layer.

摘要翻译： 提供了CMOS图像传感器及其制造方法。 具有复位晶体管，选择晶体管，驱动晶体管和光电二极管的CMOS图像传感器包括线状的有源区，与有源区相交的驱动晶体管的栅电极，插入 在有源区和栅电极之间形成阻挡层，在有源区和栅电极的交叉区域上形成有与栅电极电连接的金属触点，其中金属触点不与活性区电连接 区域由阻挡层。

公开(公告)号：US07687333B2

公开(公告)日：2010-03-30

申请号：US11965423

申请日：2007-12-27

申请人： Hee-Jung Yang ,  Dong-sun Kim ,  Du-Seok Oh ,  Won-Joon Ho

发明人： Hee-Jung Yang ,  Dong-sun Kim ,  Du-Seok Oh ,  Won-Joon Ho

IPC分类号： H01L21/336

CPC分类号： H01L29/458 ,  H01L21/2855 ,  H01L21/76841 ,  H01L27/124 ,  H01L27/1288

摘要： According to an embodiment, a method of fabricating a thin film transistor comprises forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer on the gate insulating layer, the semiconductor layer corresponding to the gate electrode; forming first and second barrier patterns on the semiconductor layer, the first and second barrier patterns including copper nitride; and forming source and drain electrodes on the first and second barrier patterns, respectively, the source and drain electrodes including pure copper.

摘要翻译： 根据一个实施例，制造薄膜晶体管的方法包括在衬底上形成栅电极; 在栅电极上形成栅极绝缘层; 在所述栅极绝缘层上形成半导体层，所述半导体层对应于所述栅电极; 在所述半导体层上形成第一和第二屏障图案，所述第一和第二屏障图案包括氮化铜; 以及分别在第一和第二阻挡图案上形成源极和漏极，源极和漏极包括纯铜。

公开(公告)号：US20090294781A1

公开(公告)日：2009-12-03

申请号：US12271775

申请日：2008-11-14

申请人： Seok-Won KIM ,  Won-Joon Ho ,  Hyuk-Jin Kwon ,  Chang-Mo Yoo

发明人： Seok-Won KIM ,  Won-Joon Ho ,  Hyuk-Jin Kwon ,  Chang-Mo Yoo

IPC分类号： H01L21/336 ,  H01L33/00

CPC分类号： H01L27/124 ,  G02F1/1368 ,  G02F2001/136236 ,  G02F2201/40 ,  G03F7/40 ,  G03F7/427 ,  H01L27/1288

摘要： A method of fabricating an array substrate for a liquid crystal display device includes: forming an initial photoresist (PR) pattern on a metallic material layer; etching the metallic material layer using the initial PR pattern as an etching mask to form the data line and a metallic material pattern, wherein the initial PR pattern is disposed on the data line; performing a first ashing process onto the initial PR pattern to partially remove the initial PR pattern so as to form a first ashed PR pattern, the first ashed PR pattern having a smaller width and a smaller thickness than the initial PR pattern such that end portions of the data line are exposed by the first ashed PR pattern; etching the intrinsic amorphous silicon layer and the impurity-doped amorphous silicon layer by a first dry-etching process; forming a source electrode and a drain electrode on the substrate.

摘要翻译： 制造液晶显示装置阵列基板的方法包括：在金属材料层上形成初始光致抗蚀剂（PR）图案; 使用初始PR图案蚀刻金属材料层作为蚀刻掩模以形成数据线和金属材料图案，其中初始PR图案设置在数据线上; 对初始PR图案执行第一灰化处理以部分地去除初始PR图案以形成第一灰化PR图案，第一灰化PR图案具有比初始PR图案更小的宽度和更小的厚度， 数据线由第一个灰色PR图案曝光; 通过第一干蚀刻工艺蚀刻本征非晶硅层和杂质掺杂非晶硅层; 在基板上形成源电极和漏电极。

公开(公告)号：US20090166640A1

公开(公告)日：2009-07-02

申请号：US12314605

申请日：2008-12-12

申请人： Gyu Won Han ,  Dong Sun Kim ,  Won Joon Ho ,  Hee Jung Yang

发明人： Gyu Won Han ,  Dong Sun Kim ,  Won Joon Ho ,  Hee Jung Yang

IPC分类号： H01L33/00 ,  B32B5/02 ,  C23C14/08

CPC分类号： H01L23/53238 ,  H01L21/32051 ,  H01L21/76829 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T428/2958 ,  H01L2924/00

摘要： The present invention relates to a copper wire in a semiconductor device in which a barrier layer is formed for improving adhesion of a copper wire without any additional fabricating step; a method for fabricating the same, and a flat panel display device with the same. The copper wire includes a barrier layer formed on an underlying structure, and a copper conductive layer on the barrier layer, wherein the barrier layer includes at least one of a Cu2O layer and a CuOxNy layer.

摘要翻译： 本发明涉及一种半导体器件中的铜线，其中形成阻挡层以改善铜线的附着，而无需任何额外的制造步骤; 其制造方法和具有该方法的平板显示装置。 铜线包括形成在下面的结构上的阻挡层和阻挡层上的铜导电层，其中阻挡层包括Cu 2 O层和CuO x N y层中的至少一种。

公开(公告)号：US08247256B2

公开(公告)日：2012-08-21

申请号：US12970547

申请日：2010-12-16

申请人： Won-Joon Ho ,  Kyung-Lak Lee

发明人： Won-Joon Ho ,  Kyung-Lak Lee

IPC分类号： H01L21/00

CPC分类号： H01L27/14603 ,  H01L27/14683 ,  H01L29/7851 ,  H01L29/7853 ,  H01L2924/0002 ,  H01L2924/00

摘要： There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with the active region, a blocking layer interposed between the active region and the gate electrode in which the blocking layer is formed on an intersection region of the active region and the gate electrode, and a metal contact electrically connected to the gate electrode, wherein the metal contact is not electrically connected to the active region by the blocking layer.

摘要翻译： 提供了CMOS图像传感器及其制造方法。 具有复位晶体管，选择晶体管，驱动晶体管和光电二极管的CMOS图像传感器包括线状的有源区，与有源区相交的驱动晶体管的栅电极，插入 在有源区和栅电极之间形成阻挡层，在有源区和栅电极的交叉区域上形成有与栅电极电连接的金属触点，其中金属触点不与活性区电连接 区域由阻挡层。