发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US12923968申请日： 2010-10-19
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公开(公告)号： US08179688B2公开(公告)日： 2012-05-15
- 发明人: Yutaka Fukuda , Mitsuhiro Saitou , Toshihiro Nagaya , Kan Kinouchi , Sadahiro Akama , Koji Numazaki , Norihisa Imaizumi
- 申请人： Yutaka Fukuda , Mitsuhiro Saitou , Toshihiro Nagaya , Kan Kinouchi , Sadahiro Akama , Koji Numazaki , Norihisa Imaizumi
- 申请人地址： JP Kariya
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2004-118889 20040414; JP2004-171220 20040609; JP2004-171221 20040609; JP2004-175419 20040614; JP2004-175420 20040614; JP2004-200448 20040707; JP2004-291398 20041004
- 主分类号： H05K7/02
- IPC分类号： H05K7/02 ; H05K7/06 ; H05K7/08 ; H05K7/10
摘要：
An electric device includes: a first electric element; a second electric element capable of flowing large current therethrough so that heat is generated in the second electric element; a heat sink; and a first wiring board and a second wiring board, which are disposed on one side of the heat sink. The large current in the second electric element is larger than that in the first electric element. The first wiring board and the second wiring board are separated each other. The first electric element is disposed on the first wiring board, and the second electric element is disposed on the second wiring board.
公开/授权文献
- US20110044009A1 Semiconductor device 公开/授权日：2011-02-24
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