Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12923968Application Date: 2010-10-19
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Publication No.: US08179688B2Publication Date: 2012-05-15
- Inventor: Yutaka Fukuda , Mitsuhiro Saitou , Toshihiro Nagaya , Kan Kinouchi , Sadahiro Akama , Koji Numazaki , Norihisa Imaizumi
- Applicant: Yutaka Fukuda , Mitsuhiro Saitou , Toshihiro Nagaya , Kan Kinouchi , Sadahiro Akama , Koji Numazaki , Norihisa Imaizumi
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2004-118889 20040414; JP2004-171220 20040609; JP2004-171221 20040609; JP2004-175419 20040614; JP2004-175420 20040614; JP2004-200448 20040707; JP2004-291398 20041004
- Main IPC: H05K7/02
- IPC: H05K7/02 ; H05K7/06 ; H05K7/08 ; H05K7/10
Abstract:
An electric device includes: a first electric element; a second electric element capable of flowing large current therethrough so that heat is generated in the second electric element; a heat sink; and a first wiring board and a second wiring board, which are disposed on one side of the heat sink. The large current in the second electric element is larger than that in the first electric element. The first wiring board and the second wiring board are separated each other. The first electric element is disposed on the first wiring board, and the second electric element is disposed on the second wiring board.
Public/Granted literature
- US20110044009A1 Semiconductor device Public/Granted day:2011-02-24
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