发明授权
- 专利标题: Laser diode and method of manufacturing the same
- 专利标题(中): 激光二极管及其制造方法
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申请号: US13099503申请日: 2011-05-03
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公开(公告)号: US08179941B2公开(公告)日: 2012-05-15
- 发明人: Shoji Hirata , Tsunenori Asatsuma , Yoshiro Takiguchi
- 申请人: Shoji Hirata , Tsunenori Asatsuma , Yoshiro Takiguchi
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: SNR Denton US LLP
- 优先权: JP2007-259429 20071003
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.
公开/授权文献
- US20110206080A1 LASER DIODE AND METHOD OF MANUFACTURING THE SAME 公开/授权日:2011-08-25