Invention Grant
- Patent Title: Method of manufacturing a semiconductor device with quantum dots formed by self-assembled growth
- Patent Title (中): 通过自组装生长形成量子点的半导体器件的制造方法
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Application No.: US12926893Application Date: 2010-12-16
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Publication No.: US08183073B2Publication Date: 2012-05-22
- Inventor: Yasuhiko Arakawa , Denis Guimard , Shiro Tsukamoto , Hiroji Ebe , Mitsuru Sugawara
- Applicant: Yasuhiko Arakawa , Denis Guimard , Shiro Tsukamoto , Hiroji Ebe , Mitsuru Sugawara
- Applicant Address: JP Kawasaki JP Tokyo
- Assignee: Fujitsu Limited,The University of Tokyo
- Current Assignee: Fujitsu Limited,The University of Tokyo
- Current Assignee Address: JP Kawasaki JP Tokyo
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2006-135120 20060515; JP2007-123592 20070508
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of the base layer 10 before or in the step of forming quantum dots 16; the step of etching the surfaces of the quantum dots 16 with an As raw material gas to thereby remove an InSb layer 18 containing Sb deposited on the surfaces of the quantum dots 16; and growing a capping layer 22 on the quantum dots 16 with the InSb layer 18 removed.
Public/Granted literature
- US20110134950A1 Method of manufacturing semiconductor device Public/Granted day:2011-06-09
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