摘要:
The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of the base layer 10 before or in the step of forming quantum dots 16; the step of etching the surfaces of the quantum dots 16 with an As raw material gas to thereby remove an InSb layer 18 containing Sb deposited on the surfaces of the quantum dots 16; and growing a capping layer 22 on the quantum dots 16 with the InSb layer 18 removed.
摘要:
The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of the base layer 10 before or in the step of forming quantum dots 16; the step of etching the surfaces of the quantum dots 16 with an As raw material gas to thereby remove an InSb layer 18 containing Sb deposited on the surfaces of the quantum dots 16; and growing a capping layer 22 on the quantum dots 16 with the InSb layer 18 removed.
摘要:
The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of the base layer 10 before or in the step of forming quantum dots 16; the step of etching the surfaces of the quantum dots 16 with an As raw material gas to thereby remove an InSb layer 18 containing Sb deposited on the surfaces of the quantum dots 16; and growing a capping layer 22 on the quantum dots 16 with the InSb layer 18 removed.
摘要:
The method of manufacturing the semiconductor device comprises the step of forming quantum dots 16 on a base layer 10 by self-assembled growth; the step of irradiating Sb or GaSb to the surface of the base layer 10 before or in the step of forming quantum dots 16; the step of etching the surfaces of the quantum dots 16 with an As raw material gas to thereby remove an InSb layer 18 containing Sb deposited on the surfaces of the quantum dots 16; and growing a capping layer 22 on the quantum dots 16 with the InSb layer 18 removed.
摘要:
A quantum semiconductor device including quantum dots formed by S-K growth process taking place in a heteroepitaxial system wherein the relationship between the energy level of light holes and the energy level of heavy holes in the valence band is changed by optimizing the in-plane strain and the vertical strain accumulated in a quantum dot.
摘要:
A wavelength conversion device including a nonlinear medium having quantum dots uses a tunable laser as an excitation light source of optical four wave mixing, and performs wavelength conversion for a wide bandwidth signal light with optical four wave mixing by employing a control apparatus for controlling an optical system including an optical path of a signal light and an optical system including an optical path of an excitation light in correspondence with a wavelength of a signal light that is to be wavelength converted.
摘要:
A user apparatus periodically detects the mount state of any terminal interface card, and transmits, to a center apparatus, configuration information indicative of the configuration of the user apparatus and including the detection result, when responding to a request for delay time measurement. The center apparatus recognizes and manages the configuration of the user apparatus on the basis of the configuration information. When newly mounting or removing of a terminal interface card has been recognized, the center apparatus performs newly setting releasing of a destination identifier corresponding to the mounted or removed terminal interface card, and notifies the user apparatus of the newly set destination identifier. The user apparatus, in turn, manages identification information sent from the center apparatus, in relation to the terminal interface unit corresponding to the information. As a result, exchange, addition or cancel of communication services which the user uses can be performed easily.
摘要:
In a process for preparing a fluorinated olefin having a carbon—carbon double bond, the carbon atoms of which have a fluorine atom, by reacting a halogenated olefin having at least one carbon—carbon double bond, a carbon atom or the carbon atoms of which bond have a chlorine atom or atoms bound thereto, and, in which the carbon atom or atoms with a single bond in the molecule have no halogen atom other than a fluorine atom, with an alkali metal fluoride, said reaction of the halogenated olefin with the alkali metal fluoride is conducted in the presence of an organic halogen-containing compound having a carbon—carbon single bond, a carbon or the carbons of which have at least one halogen atom other than fluorine atom.
摘要:
The present display device is a retinal scan display device including: a projection optical system configured to project an image to a retina of an eye; a distortion correcting unit configured to correct a distortion of the image; an image inverting unit configured to invert the image; and a storage unit configured to store correction data for correcting the distortion of the image when the image is projected to a left eye and correction data for correcting the distortion of the image when the image is projected to a right eye, wherein, based on a switching signal that represents that a side at which the projection optical system is arranged has been switched from one eye side to the other eye side, the distortion correcting unit performs distortion correction, by switching from correction data corresponding to one eye to correction data corresponding to the other eye, and the image inverting unit performs image inversion.
摘要:
A switching circuit includes: a switching section including at least one first terminal, a plurality of second terminals, and a switching element configured to connect the first terminal to one of the second terminals; a driver driving the switching element in accordance with an external terminal switching control signal; a DC-to-DC converter, which supplies electric power to the driver, having a first state with a response to a load transient and a second state with the response to a load transient being slower than the first state; and a power controller controlling the DC-to-DC converter to operate with the first state during a first time period corresponding to change in the external terminal switching control signal, and to operate with the second state during a second time period other than the first time period.