发明授权
US08183138B2 Methods for forming nanodots and/or a patterned material during the formation of a semiconductor device
有权
在形成半导体器件期间形成纳米点和/或图案化材料的方法
- 专利标题： Methods for forming nanodots and/or a patterned material during the formation of a semiconductor device
- 专利标题（中）： 在形成半导体器件期间形成纳米点和/或图案化材料的方法
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申请号： US12705704申请日： 2010-02-15
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公开(公告)号： US08183138B2公开(公告)日： 2012-05-22
- 发明人: Krupakar M. Subramanian , Mirzafer Abatchev
- 申请人： Krupakar M. Subramanian , Mirzafer Abatchev
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
Methods for forming nanodots and/or a patterned material are provided. One such method involves forming a first patterning material over a base. Blades of a nanoimprint lithography template are placed within the first patterning material, wherein the blades extend along the base in a first direction. With the blades within the first patterning material, the first patterning material are cured. The blades are removed from the first patterning material to form a patterned first patterning material. The base is etched using the patterned first patterning material as a pattern to form openings in the base. The patterned first patterning material is removed from the base. A second patterning material is formed over the base and within the openings in the base. Blades of a nanoimprint lithography template are placed within the second patterning material, wherein the blades extend along the base in a second direction, which is generally perpendicular with respect to the first direction. With the blades within the second patterning material, the second patterning material is cured. The blades are removed from the second patterning material to form a patterned second patterning material. The base is etched using the patterned second patterning material as a pattern to form openings in the base. The patterned second patterning material is removed from the base.
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