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1.发明授权Method of depositing a layer comprising silicon, carbon, and fluorine onto a semiconductor substrate 失效将包含硅，碳和氟的层沉积到半导体衬底上的方法公开(公告)号：US07473645B2
公开(公告)日：2009-01-06
申请号：US11601362
申请日：2006-11-16
IPC分类号： H01L21/331
CPC分类号： H01L21/3086 , H01L21/0337 , H01L21/3148
摘要： The invention includes methods of etching substrates, methods of forming features on substrates, and methods of depositing a layer comprising silicon, carbon and fluorine onto a semiconductor substrate. In one implementation, a method of etching includes forming a masking feature projecting from a substrate. The feature has a top, opposing sidewalls, and a base. A layer comprising SixCyFz is deposited over the feature, where “x” is from 0 to 0.2, “y” is from 0.3 to 0.9, and “z” is from 0.1 to 0.6. The SixCyFz—comprising layer and upper portions of the feature opposing sidewalls are etched effective to laterally recess such upper portions proximate the feature top relative to lower portions of the feature opposing sidewalls proximate the feature base. After such etching of the SixCyFz—comprising layer and such etching of upper portions of the feature sidewalls, the substrate is etched using the masking feature as a mask.
摘要翻译： 本发明包括蚀刻衬底的方法，在衬底上形成特征的方法，以及将包含硅，碳和氟的层沉积到半导体衬底上的方法。 在一个实施方案中，蚀刻方法包括形成从基板突出的掩模特征。 该特征具有顶部，相对的侧壁和基部。 在该特征上沉积包含SixCyFz的层，其中“x”为0至0.2，“y”为0.3至0.9，“z”为0.1至0.6。 含有SixCyFz的层和特征相对的侧壁的上部被蚀刻有效地横向凹入靠近特征顶部的上部相对于靠近特征基底的相对侧壁的特征的下部。 在对包含SixCyFz的层进行这种蚀刻以及特征侧壁的上部蚀刻之后，使用掩模特征作为掩模蚀刻衬底。
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公开(公告)号：US20110294294A1
公开(公告)日：2011-12-01
申请号：US13207627
申请日：2011-08-11
IPC分类号： H01L21/311 , H01L21/306
CPC分类号： H01L21/31051 , H01L21/0337 , H01L21/306 , H01L21/30625 , H01L21/31055 , H01L21/31111 , H01L21/31144 , Y10T29/49128 , Y10T29/49146 , Y10T29/49151 , Y10T29/49155 , Y10T29/49171 , Y10T29/49172 , Y10T29/49176 , Y10T29/4922 , Y10T29/49224
摘要： Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed, pitch-reduced patterns of crossing elongate features that can be consolidated into a single layer. Planarizing techniques using a filler layer and a protective layer are disclosed. Portions of an integrated circuit having different heights can be etched to a common plane.
摘要翻译： 可以使用各种图案转移和蚀刻步骤来产生特征。 传统的光刻步骤可以与俯仰减小技术结合使用，以形成可以被整合成单一层的交叉细长特征的叠加的俯仰减小图案。 公开了使用填充层和保护层的平面化技术。 具有不同高度的集成电路的部分可以被蚀刻到公共平面。
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3.发明申请METHODS FOR FORMING NANODOTS AND/OR A PATTERNED MATERIAL DURING THE FORMATION OF A SEMICONDUCTOR DEVICE 有权在形成半导体器件期间形成纳米和/或图案材料的方法公开(公告)号：US20100144132A1
公开(公告)日：2010-06-10
申请号：US12705704
申请日：2010-02-15
IPC分类号： H01L21/3205 , C23F1/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S977/887 , Y10S977/888
摘要： Methods for forming nanodots and/or a patterned material are provided. One such method involves forming a first patterning material over a base. Blades of a nanoimprint lithography template are placed within the first patterning material, wherein the blades extend along the base in a first direction. With the blades within the first patterning material, the first patterning material are cured. The blades are removed from the first patterning material to form a patterned first patterning material. The base is etched using the patterned first patterning material as a pattern to form openings in the base. The patterned first patterning material is removed from the base. A second patterning material is formed over the base and within the openings in the base. Blades of a nanoimprint lithography template are placed within the second patterning material, wherein the blades extend along the base in a second direction, which is generally perpendicular with respect to the first direction. With the blades within the second patterning material, the second patterning material is cured. The blades are removed from the second patterning material to form a patterned second patterning material. The base is etched using the patterned second patterning material as a pattern to form openings in the base. The patterned second patterning material is removed from the base.
摘要翻译： 提供了形成纳米点和/或图案化材料的方法。 一种这样的方法包括在基底上形成第一图案形成材料。 纳米压印光刻模板的刀片放置在第一图案形成材料内，其中刀片沿着第一方向沿底座延伸。 利用第一图案形成材料内的刀片，第一图案形成材料被固化。 将刀片从第一图案形成材料上去除以形成图案化的第一图案形成材料。 使用图案化的第一图案形成材料作为图案蚀刻基底，以在基底中形成开口。 图案化的第一图案形成材料从基底上去除。 第二图案形成材料形成在基底上并且在基部的开口内。 纳米压印光刻模板的刀片放置在第二图案形成材料内，其中刀片沿着基本上相对于第一方向垂直的第二方向延伸。 利用第二图案形成材料内的刀片，固化第二图案形成材料。 将刀片从第二图案形成材料中去除以形成图案化的第二图案形成材料。 使用图案化的第二图案形成材料作为图案蚀刻基底，以在基底中形成开口。 图案化的第二图案形成材料从基底移除。
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公开(公告)号：US08479384B2
公开(公告)日：2013-07-09
申请号：US13207627
申请日：2011-08-11
IPC分类号： H05K3/20
CPC分类号： H01L21/31051 , H01L21/0337 , H01L21/306 , H01L21/30625 , H01L21/31055 , H01L21/31111 , H01L21/31144 , Y10T29/49128 , Y10T29/49146 , Y10T29/49151 , Y10T29/49155 , Y10T29/49171 , Y10T29/49172 , Y10T29/49176 , Y10T29/4922 , Y10T29/49224
摘要： Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed, pitch-reduced patterns of crossing elongate features that can be consolidated into a single layer. Planarizing techniques using a filler layer and a protective layer are disclosed. Portions of an integrated circuit having different heights can be etched to a common plane.
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5.发明授权Method for forming and planarizing adjacent regions of an integrated circuit 有权用于形成和平面化集成电路的相邻区域的方法公开(公告)号：US08011090B2
公开(公告)日：2011-09-06
申请号：US12123021
申请日：2008-05-19
CPC分类号： H01L21/31051 , H01L21/0337 , H01L21/306 , H01L21/30625 , H01L21/31055 , H01L21/31111 , H01L21/31144 , Y10T29/49128 , Y10T29/49146 , Y10T29/49151 , Y10T29/49155 , Y10T29/49171 , Y10T29/49172 , Y10T29/49176 , Y10T29/4922 , Y10T29/49224
摘要： Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed, pitch-reduced patterns of crossing elongate features that can be consolidated into a single layer. Planarizing techniques using a filler layer and a protective layer are disclosed. Portions of an integrated circuit having different heights can be etched to a common plane.
摘要翻译： 可以使用各种图案转移和蚀刻步骤来产生特征。 传统的光刻步骤可以与俯仰减小技术结合使用，以形成可以被整合成单一层的交叉细长特征的叠加的俯仰减小图案。 公开了使用填充层和保护层的平面化技术。 具有不同高度的集成电路的部分可以被蚀刻到公共平面。
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公开(公告)号：US07393789B2
公开(公告)日：2008-07-01
申请号：US11219604
申请日：2005-09-01
IPC分类号： H01L21/311 , H01L21/762
CPC分类号： H01L21/31051 , H01L21/0337 , H01L21/306 , H01L21/30625 , H01L21/31055 , H01L21/31111 , H01L21/31144 , Y10T29/49128 , Y10T29/49146 , Y10T29/49151 , Y10T29/49155 , Y10T29/49171 , Y10T29/49172 , Y10T29/49176 , Y10T29/4922 , Y10T29/49224
摘要： Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed, pitch-reduced patterns of crossing elongate features that can be consolidated into a single layer. Planarizing techniques using a filler layer and a protective layer are disclosed. Portions of an integrated circuit having different heights can be etched to a common plane.
摘要翻译： 可以使用各种图案转移和蚀刻步骤来产生特征。 传统的光刻步骤可以与俯仰减小技术结合使用，以形成可以被整合成单一层的交叉细长特征的叠加的俯仰减小图案。 公开了使用填充层和保护层的平面化技术。 具有不同高度的集成电路的部分可以被蚀刻到公共平面。
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7.发明授权Nanoimprint lithography template techniques for use during the fabrication of a semiconductor device and systems including same 失效在制造半导体器件期间使用的纳米压印光刻模板技术及包括其的系统公开(公告)号：US07662299B2
公开(公告)日：2010-02-16
申请号：US11214684
申请日：2005-08-30
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S977/887 , Y10S977/888
摘要： A method for forming a template useful for nanoimprint lithography comprises forming at least one pillar which provides a topographic feature extending from a template base. At least one conformal pattern layer and one conformal spacing layer, and generally a plurality of alternating pattern layers and spacing layers, are formed over the template base and pillar. A planarized filler layer is formed over the pattern and spacing layers, then the filler, the spacing layer and the pattern layer are partially removed, for example using mechanical polishing, to expose the pillar. One or more etches are performed to remove at least a portion of the pillar, the filler, and the spacing layer to result in the pattern layer protruding from the spacing layer and providing the template pattern.
摘要翻译： 用于形成用于纳米压印光刻的模板的方法包括形成提供从模板基底延伸的地形特征的至少一个柱。 在模板基底和柱上方形成至少一个共形图案层和一个共形间隔层，以及通常多个交替图案层和间隔层。 在图案和间隔层之上形成平坦化的填充层，然后例如使用机械抛光部分去除填料，间隔层和图案层以暴露柱。 执行一个或多个蚀刻以去除柱，填料和间隔层的至少一部分，以导致图案层从间隔层突出并提供模板图案。
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8.发明授权Method of etching a substrate; method of forming a feature on a substrate; and method of depositing a layer comprising silicon, carbon, and fluorine onto a semiconductor substrate 有权蚀刻基板的方法; 在基板上形成特征的方法; 以及将包含硅，碳和氟的层沉积到半导体衬底上的方法公开(公告)号：US07291563B2
公开(公告)日：2007-11-06
申请号：US11206414
申请日：2005-08-18
IPC分类号： H01L21/311
CPC分类号： H01L21/3086 , H01L21/0337 , H01L21/3148
摘要： The invention includes methods of etching substrates, methods of forming features on substrates, and methods of depositing a layer comprising silicon, carbon and fluorine onto a semiconductor substrate. In one implementation, a method of etching includes forming a masking feature projecting from a substrate. The feature has a top, opposing sidewalls, and a base. A layer comprising SixCyFz is deposited over the feature, where “x” is from 0 to 0.2, “y” is from 0.3 to 0.9, and “z” is from 0.1 to 0.6. The SixCyFz-comprising layer and upper portions of the feature opposing sidewalls are etched effective to laterally recess such upper portions proximate the feature top relative to lower portions of the feature opposing sidewalls proximate the feature base. After such etching of the SixCyFz-comprising layer and such etching of upper portions of the feature sidewalls, the substrate is etched using the masking feature as a mask.
摘要翻译： 本发明包括蚀刻衬底的方法，在衬底上形成特征的方法，以及将包含硅，碳和氟的层沉积到半导体衬底上的方法。 在一个实施方案中，蚀刻方法包括形成从基板突出的掩模特征。 该特征具有顶部，相对的侧壁和基部。 在特征上沉积包含Si x Si x F z的层，其中“x”为0至0.2，“y”为 0.3〜0.9，“z”为0.1〜0.6。 有意义的是，具有相同特征的Si层和顶部相对侧壁的上部被有效地横向凹入靠近 特征是相对于靠近特征基部的相对侧壁的特征的下部。 在这种蚀刻Si x SiCl 3 Z z-x元素层并蚀刻特征侧壁的上部之后，蚀刻基板 使用屏蔽功能作为掩码。
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公开(公告)号：US20120244244A1
公开(公告)日：2012-09-27
申请号：US13460179
申请日：2012-04-30
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S977/887 , Y10S977/888
摘要： Nanoimprint lithography templates are provided. One such template includes a template base and a plurality of pattern layers of a first material. Each pattern layer is separated from an adjacent pattern layer by a spacing layer of a second material that is different from the first material. Such a template also includes a plurality of pillars of a third material that is different from the first material. Each of the pillars separates two adjacent pattern layers, and each of the pattern layers has a respective portion which protrudes from the spacing layers and from the pillars.
摘要翻译： 提供了纳米压印光刻模板。 一个这样的模板包括模板基底和第一材料的多个图案层。 每个图案层通过与第一材料不同的第二材料的间隔层与相邻图案层分离。 这种模板还包括与第一材料不同的第三材料的多个柱。 每个柱分离两个相邻的图案层，并且每个图案层具有从间隔层和柱子突出的相应部分。
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10.发明授权Methods for forming nanodots and/or a patterned material during the formation of a semiconductor device 有权在形成半导体器件期间形成纳米点和/或图案化材料的方法公开(公告)号：US08183138B2
公开(公告)日：2012-05-22
申请号：US12705704
申请日：2010-02-15
IPC分类号： H01L21/20
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S977/887 , Y10S977/888
摘要： Methods for forming nanodots and/or a patterned material are provided. One such method involves forming a first patterning material over a base. Blades of a nanoimprint lithography template are placed within the first patterning material, wherein the blades extend along the base in a first direction. With the blades within the first patterning material, the first patterning material are cured. The blades are removed from the first patterning material to form a patterned first patterning material. The base is etched using the patterned first patterning material as a pattern to form openings in the base. The patterned first patterning material is removed from the base. A second patterning material is formed over the base and within the openings in the base. Blades of a nanoimprint lithography template are placed within the second patterning material, wherein the blades extend along the base in a second direction, which is generally perpendicular with respect to the first direction. With the blades within the second patterning material, the second patterning material is cured. The blades are removed from the second patterning material to form a patterned second patterning material. The base is etched using the patterned second patterning material as a pattern to form openings in the base. The patterned second patterning material is removed from the base.
摘要翻译： 提供了形成纳米点和/或图案化材料的方法。 一种这样的方法包括在基底上形成第一图案形成材料。 纳米压印光刻模板的刀片放置在第一图案形成材料内，其中刀片沿着第一方向沿底座延伸。 利用第一图案形成材料内的刀片，第一图案形成材料被固化。 将刀片从第一图案形成材料上去除以形成图案化的第一图案形成材料。 使用图案化的第一图案形成材料作为图案蚀刻基底，以在基底中形成开口。 图案化的第一图案形成材料从基底上去除。 第二图案形成材料形成在基底上并且在基部的开口内。 纳米压印光刻模板的刀片放置在第二图案形成材料内，其中刀片沿着基本上相对于第一方向垂直的第二方向延伸。 利用第二图案形成材料内的刀片，固化第二图案形成材料。 将刀片从第二图案形成材料中去除以形成图案化的第二图案形成材料。 使用图案化的第二图案形成材料作为图案蚀刻基底，以在基底中形成开口。 图案化的第二图案形成材料从基底移除。
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