Invention Grant
- Patent Title: Method for manufacturing a semiconductor device and semiconductor device obtainable with such a method
- Patent Title (中): 用这种方法制造半导体器件和半导体器件的方法
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Application No.: US12681119Application Date: 2007-10-09
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Publication No.: US08183160B2Publication Date: 2012-05-22
- Inventor: Anissa Lagha , Robert Fox , Lucile Broussous , Didier Levy
- Applicant: Anissa Lagha , Robert Fox , Lucile Broussous , Didier Levy
- Applicant Address: US TX Austin FR Crolles
- Assignee: Freescale Semiconductor, Inc.,ST Microelectronics (Crolles 2) SAS
- Current Assignee: Freescale Semiconductor, Inc.,ST Microelectronics (Crolles 2) SAS
- Current Assignee Address: US TX Austin FR Crolles
- International Application: PCT/IB2007/055367 WO 20071009
- International Announcement: WO2009/047588 WO 20090416
- Main IPC: H01L21/311
- IPC: H01L21/311
Abstract:
A method for manufacturing a semiconductor device includes providing a patterned hard-mask layer. The hard-mask layer is provided on an exposed surface of one or more layers to be patterned of a semiconductor intermediate product. The hard-mask layer covers the exposed surface in covered areas of the one or more layers to be patterned and does not cover the exposed surface in bared areas of the one or more layers to be patterned. One or more recesses are formed in the layers to be patterned by at least partially removing the layers to be patterned in the bared areas. The hard-mask layer is ten removed. After removing the hard-mask layer the recess is filled with a filling material.
Public/Granted literature
- US20100225003A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINABLE WITH SUCH A METHOD Public/Granted day:2010-09-09
Information query
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