发明授权
- 专利标题： Temperature controlled ion source
- 专利标题（中）： 温度控制离子源
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申请号： US12754318申请日： 2010-04-05
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公开(公告)号： US08183542B2公开(公告)日： 2012-05-22
- 发明人: Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
- 申请人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
- 申请人地址： US MA Gloucester
- 专利权人： Varion Semiconductor Equipment Associates, Inc.
- 当前专利权人： Varion Semiconductor Equipment Associates, Inc.
- 当前专利权人地址： US MA Gloucester
- 主分类号： G21K5/10
- IPC分类号： G21K5/10
摘要：
An ion source is provided that utilizes a cooling plate and a gap interface to control the temperature of an ion source chamber. The gap interface is defined between the cooling plate and a wall of the chamber. A coolant gas is supplied to the interface at a given pressure where the pressure determines thermal conductivity from the cooling plate to the chamber to control the temperature of the interior of the chamber.
公开/授权文献
- US20110240877A1 TEMPERATURE CONTROLLED ION SOURCE 公开/授权日：2011-10-06
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