发明授权
US08183587B2 LED with upstanding nanowire structure and method of producing such
有权
LED具有直观的纳米线结构及其制作方法
- 专利标题： LED with upstanding nanowire structure and method of producing such
- 专利标题（中）： LED具有直观的纳米线结构及其制作方法
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申请号： US11812225申请日： 2007-06-15
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公开(公告)号： US08183587B2公开(公告)日： 2012-05-22
- 发明人: Lars Ivar Samuelson , Bo Pedersen , Bjorn Jonas Ohlsson
- 申请人： Lars Ivar Samuelson , Bo Pedersen , Bjorn Jonas Ohlsson
- 申请人地址： SE Lund
- 专利权人： QuNano AB
- 当前专利权人： QuNano AB
- 当前专利权人地址： SE Lund
- 代理机构： The Marbury Law Group, PLLC
- 优先权： SE0602841 20061222
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
The present invention relates to light emitting diodes, LEDs. In particular the invention relates to a LED comprising a nanowire as an active component. The nanostructured LED according to the embodiments of the invention comprises a substrate and at an upstanding nanowire protruding from the substrate. A pn-junction giving an active region to produce light is present within the structure. The nanowire, or at least a part of the nanowire, forms a wave-guiding section directing at least a portion of the light produced in the active region in a direction given by the nanowire.