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    LED with upstanding nanowire structure and method of producing such
    1.
    发明授权
    LED with upstanding nanowire structure and method of producing such 有权
    LED具有直观的纳米线结构及其制作方法

    公开(公告)号：US08183587B2

    公开(公告)日：2012-05-22

    申请号：US11812225

    申请日：2007-06-15

    申请人： Lars Ivar Samuelson ,  Bo Pedersen ,  Bjorn Jonas Ohlsson

    发明人： Lars Ivar Samuelson ,  Bo Pedersen ,  Bjorn Jonas Ohlsson

    IPC分类号： H01L33/00

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G02B6/107 ,  H01L29/0673 ,  H01L29/0676 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60

    摘要： The present invention relates to light emitting diodes, LEDs. In particular the invention relates to a LED comprising a nanowire as an active component. The nanostructured LED according to the embodiments of the invention comprises a substrate and at an upstanding nanowire protruding from the substrate. A pn-junction giving an active region to produce light is present within the structure. The nanowire, or at least a part of the nanowire, forms a wave-guiding section directing at least a portion of the light produced in the active region in a direction given by the nanowire.

    摘要翻译： 本发明涉及发光二极管，LED。 特别地，本发明涉及一种包含纳米线作为活性组分的LED。 根据本发明的实施例的纳米结构LED包括衬底和从衬底突出的直立的纳米线。 在结构内存在一个产生光的有源区的pn结。 纳米线或纳米线的至少一部分形成波导部分，其引导在由纳米线给出的方向上在有源区域中产生的光的至少一部分。

    NANOWHISKERS WITH PN JUNCTIONS, DOPED NANOWHISKERS, AND METHODS FOR PREPARING THEM
    3.
    发明申请
    NANOWHISKERS WITH PN JUNCTIONS, DOPED NANOWHISKERS, AND METHODS FOR PREPARING THEM 有权
    具有PN结的纳米颗粒，DOPED NANOWHISKERS及其制备方法

    公开(公告)号：US20110193055A1

    公开(公告)日：2011-08-11

    申请号：US13033111

    申请日：2011-02-23

    申请人： Lars Ivar Samuelson ,  Bjorn Jonas Ohlsson ,  Lars-Åke Ledebo

    发明人： Lars Ivar Samuelson ,  Bjorn Jonas Ohlsson ,  Lars-Åke Ledebo

    IPC分类号： H01L29/06 ,  B82Y99/00

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  C30B11/00 ,  C30B11/12 ,  C30B29/62 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02653 ,  H01L21/2258 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/861 ,  H01L29/885 ,  Y10S977/932

    摘要： Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode. In another embodiment, a nanowhisker is surrounded by polymer material containing dopant material. A step of rapid thermal annealing causes the dopant material to diffuse into the nanowhisker. In a further embodiment, a nanowhisker has a heterojunction between two different intrinsic materials, and Fermi level pinning creates a pn junction at the interface without doping.

    摘要翻译： 公开了纳米工程结构，其结合具有高迁移率导电性的纳米晶须并结合pn结。 在一个实施方案中，第一半导体材料的纳米晶须具有第一带隙，并且包含至少一个具有第二带隙的第二材料的外壳沿其长度的至少部分包围所述纳米元件，所述第二材料被掺杂以提供相反的 导电型电荷载体在沿着纳米晶须的长度的相应的第一和第二区域中，由此通过将电荷载流子转移到纳米晶须中而在纳米晶须中产生相应导电型电荷载体的对应的第一和第二区域， 它们之间的自由载体。 外壳材料的掺杂可以是退化的，以便在纳米晶须相邻的段内产生类似于Esaki二极管的重掺杂区域的相反导电类型的非常重的调制掺杂。 在另一个实施方案中，纳米晶须被含有掺杂剂材料的聚合物材料包围。 快速热退火的步骤使掺杂剂材料扩散到纳米晶须中。 在另一个实施方案中，纳米晶须在两种不同的本征材料之间具有异质结，并且费米能级钉扎在界面处产生不掺杂的pn结。

    Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them
    7.
    发明申请
    Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them 有权
    具有PN结的纳米晶须，掺杂的纳米晶须及其制备方法

    公开(公告)号：US20090014711A1

    公开(公告)日：2009-01-15

    申请号：US12230086

    申请日：2008-08-22

    申请人： Lars Ivar Samuelson ,  Bjorn Jonas Ohlsson ,  Lars-Ake Ledebo

    发明人： Lars Ivar Samuelson ,  Bjorn Jonas Ohlsson ,  Lars-Ake Ledebo

    IPC分类号： H01L29/06 ,  H01L21/20

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  C30B11/00 ,  C30B11/12 ,  C30B29/62 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02653 ,  H01L21/2258 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/861 ,  H01L29/885 ,  Y10S977/932

    摘要： Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode. In another embodiment, a nanowhisker is surrounded by polymer material containing dopant material. A step of rapid thermal annealing causes the dopant material to diffuse into the nanowhisker. In a further embodiment, a nanowhisker has a heterojunction between two different intrinsic materials, and Fermi level pinning creates a pn junction at the interface without doping.

    摘要翻译： 公开了纳米工程结构，其结合具有高迁移率导电性的纳米晶须并结合pn结。 在一个实施方案中，第一半导体材料的纳米晶须具有第一带隙，并且包含至少一个具有第二带隙的第二材料的外壳沿其长度的至少部分包围所述纳米元件，所述第二材料被掺杂以提供相反的 导电型电荷载体在沿着纳米晶须的长度的相应的第一和第二区域中，由此通过将电荷载流子转移到纳米晶须中而在纳米晶须中产生相应导电型电荷载体的对应的第一和第二区域， 它们之间的自由载体。 外壳材料的掺杂可以是退化的，以便在纳米晶须相邻的段内产生类似于Esaki二极管的重掺杂区域的相反导电类型的非常重的调制掺杂。 在另一个实施方案中，纳米晶须被含有掺杂剂材料的聚合物材料包围。 快速热退火的步骤使掺杂剂材料扩散到纳米晶须中。 在另一个实施方案中，纳米晶须在两种不同的本征材料之间具有异质结，并且费米能级钉扎在界面处产生不掺杂的pn结。

    Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
    8.
    发明授权
    Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them 有权
    精确定位的纳米晶须和纳米晶须阵列及其制备方法

    公开(公告)号：US08790462B2

    公开(公告)日：2014-07-29

    申请号：US12574014

    申请日：2009-10-06

    申请人： Lars Ivar Samuelson ,  Bjorn Jonas Ohlsson ,  Thomas M. I. Martensson

    发明人： Lars Ivar Samuelson ,  Bjorn Jonas Ohlsson ,  Thomas M. I. Martensson

    IPC分类号： C30B25/00 ,  C30B29/40 ,  B82Y30/00 ,  B82Y10/00 ,  C30B11/00 ,  C30B29/60 ,  C30B11/12

    CPC分类号： C30B11/00 ,  B82Y10/00 ,  B82Y30/00 ,  C30B11/12 ,  C30B29/40 ,  C30B29/605

    摘要： A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array, wherein each nanowhisker is sited within a distance from a predetermined site not greater than about 20% of its distance from its nearest neighbour. To produce the array, an array of masses of a catalytic material are positioned on the surface, heat is applied and materials in gaseous form are introduced such as to create a catalytic seed particle from each mass, and to grow, from the catalytic seed particle, epitaxially, a nanowhisker of a predetermined material, and wherein each mass upon melting, retains approximately the same interface with the substrate surface such that forces causing the mass to migrate across said surface are less than a holding force across a wetted interface on the substrate surface.

    摘要翻译： 纳米工程结构，其包括在预定空间配置中在衬底上的大于约1000纳米晶须的阵列，用于例如光子带隙阵列，其中每个纳米晶须位于与预定位置不超过约20％的距离内， 距离其最近的邻居的距离。 为了制造阵列，将一组催化材料的质量定位在表面上，加热并且引入气态物质，以便从每个物质形成催化种子颗粒并从催化种子颗粒生长 外延的是预定材料的纳米晶须，并且其中熔化时的每个质量与基底表面保持大致相同的界面，使得导致物质迁移穿过所述表面的力小于穿过基底上的润湿界面的保持力 表面。

    Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them
    10.
    发明授权
    Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them 有权
    具有PN结的纳米晶须，掺杂的纳米晶须及其制备方法

    公开(公告)号：US08120009B2

    公开(公告)日：2012-02-21

    申请号：US13033111

    申请日：2011-02-23

    申请人： Lars Ivar Samuelson ,  Bjorn Jonas Ohlsson ,  Lars-Ake Ledebo

    发明人： Lars Ivar Samuelson ,  Bjorn Jonas Ohlsson ,  Lars-Ake Ledebo

    IPC分类号： H01L33/00

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  C30B11/00 ,  C30B11/12 ,  C30B29/62 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02653 ,  H01L21/2258 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/861 ,  H01L29/885 ,  Y10S977/932

    摘要： Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode. In another embodiment, a nanowhisker is surrounded by polymer material containing dopant material. A step of rapid thermal annealing causes the dopant material to diffuse into the nanowhisker. In a further embodiment, a nanowhisker has a heterojunction between two different intrinsic materials, and Fermi level pinning creates a pn junction at the interface without doping.

    摘要翻译： 公开了纳米工程结构，其结合具有高迁移率导电性的纳米晶须并结合pn结。 在一个实施方案中，第一半导体材料的纳米晶须具有第一带隙，并且包含至少一个具有第二带隙的第二材料的外壳沿其长度的至少部分包围所述纳米元件，所述第二材料被掺杂以提供相反的 导电型电荷载体在沿着纳米晶须的长度的相应的第一和第二区域中，由此通过将电荷载流子转移到纳米晶须中而在纳米晶须中产生相应导电型电荷载体的对应的第一和第二区域， 它们之间的自由载体。 外壳材料的掺杂可以是退化的，以便在纳米晶须相邻的段内产生类似于Esaki二极管的重掺杂区域的相反导电类型的非常重的调制掺杂。 在另一个实施方案中，纳米晶须被含有掺杂剂材料的聚合物材料包围。 快速热退火的步骤使掺杂剂材料扩散到纳米晶须中。 在另一个实施方案中，纳米晶须在两种不同的本征材料之间具有异质结，并且费米能级钉扎在界面处产生不掺杂的pn结。