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US08183673B2 Through-silicon via structures providing reduced solder spreading and methods of fabricating the same 有权
提供降低焊料扩散的通硅结构及其制造方法

Through-silicon via structures providing reduced solder spreading and methods of fabricating the same
Abstract:
A microelectronic device structure as provided herein includes a conductive via having a body portion extending into a substrate from an upper surface thereof and a connecting portion laterally extending along the upper surface of the substrate. The connecting portion includes a recess therein opposite the upper surface of the substrate. The recess is confined within the connecting portion of the conductive via and does not extend beneath the upper surface of the substrate. A microelectronic device structure is also provided that includes a conductive via having a body portion extending into a substrate from an upper surface thereof and an end portion below the upper surface of the substrate. The end portion has a greater width than that of the body portion. A solder wettable layer is provided on the end portion. The solder wettable layer is formed of a material having a greater wettability with a conductive metal than that of the end portion of conductive via. Related methods of fabrication are also discussed.
Abstract(Chinese):

如本文提供的微电子器件结构包括导电通孔，其导体通孔具有从其上表面延伸到衬底中的主体部分和沿衬底的上表面横向延伸的连接部分。 连接部分包括与衬底的上表面相对的凹部。 凹槽被限制在导电通孔的连接部分内，并且不延伸到衬底的上表面之下。 还提供了一种微电子器件结构，其包括导电通孔，该导电通孔具有从其上表面延伸到衬底中的主体部分和位于衬底的上表面下方的端部。 端部具有比主体部分宽的宽度。 在端部设置焊料可湿性层。 焊料可湿性层由导电金属具有比导电通孔的端部润湿性更高的润湿性的材料形成。 还讨论了相关的制造方法。

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