利索-全球专利检索

  1. 登录
  2. 注册
发明授权
US08183749B2 Electronic device and method of making same 有权
电子设备及其制作方法

Electronic device and method of making same
摘要：
The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.
摘要（中）：

本发明提供了具有改进特性的电子设备和制造该电子设备的方法。 在制造根据本发明的电子设备（压电器件）74的方法中，形成在层压体60的电极膜46A上的压电膜52A的外边缘R1位于电极膜46A的外边缘R2的内侧 。 因此，从蚀刻液在聚酰亚胺72和层叠体60之间渗透的多层基板61去除单晶Si基板14时，蚀刻液在其到达压电膜52A之前就绕过电极膜46A。 也就是说，通过电极膜46A显着地延长到压电膜52A的蚀刻溶液的路线A. 因此，在制造电子设备74的方法中，蚀刻溶液不太可能到达压电膜52A。 这显着地抑制了压电膜52A的溶解情况，并且实现了所制作的压电装置74的特性的改善。

公开/授权文献
信息查询
Espacenet
0/0