发明授权
- 专利标题: Magnetoresistance effect device, magnetic lamination structural body, and manufacture method for magnetic lamination structural body
- 专利标题(中): 磁阻效应器件,磁性层压结构体及磁性层压结构体的制造方法
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申请号: US12041396申请日: 2008-03-03
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公开(公告)号: US08184407B2公开(公告)日: 2012-05-22
- 发明人: Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
- 申请人: Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
- 申请人地址: JP Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JP Kawasaki
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2007-072280 20070320
- 主分类号: G11B5/33
- IPC分类号: G11B5/33
摘要:
An underlying layer (2) made of NiFeN is disposed over the principal surface of a substrate. A pinning layer (3) made of antiferromagnetic material containing Ir and Mn is disposed on the underlying layer. A reference layer (4c) made of ferromagnetic material whose magnetization direction is fixed through exchange-coupling with the pinning layer directly or via another ferromagnetic material layer, is disposed over the pinning layer. A nonmagnetic layer (7) made of nonmagnetic material is disposed over the reference layer. A free layer (8) made of ferromagnetic material whose magnetization direction changes in dependence upon an external magnetic field, is disposed over the nonmagnetic layer.
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