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1.发明申请Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device 有权隧道磁阻（TMR）器件，其制造方法，磁头和使用TMR器件的磁存储器公开(公告)号：US20110164448A1
公开(公告)日：2011-07-07
申请号：US13046567
申请日：2011-03-11
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01L43/08 , H01L43/12 , Y10T428/1114
摘要： A barrier layer is disposed over a pinned layer made of ferromagnetic material having a fixed magnetization direction, the barrier layer having a thickness allowing electrons to transmit therethrough by a tunneling phenomenon. A first free layer is disposed over the barrier layer, the first free layer being made of amorphous or fine crystalline soft magnetic material which changes a magnetization direction under an external magnetic field. A second free layer is disposed over the first free layer, the second free layer being made of crystalline soft magnetic material which changes a magnetization direction under an external magnetic field and being exchange-coupled to the first free layer. A tunneling magnetoresistance device is provided which has good magnetic characteristics and can suppress a tunnel resistance change rate from being lowered.
摘要翻译： 阻挡层设置在由具有固定的磁化方向的铁磁材料制成的被钉扎层上，阻挡层具有允许电子通过隧道现象透过的厚度。 第一自由层设置在阻挡层上，第一自由层由在外部磁场下改变磁化方向的非晶或细晶体软磁材料制成。 第二自由层设置在第一自由层之上，第二自由层由结晶软磁材料制成，其在外部磁场下改变磁化方向并与第一自由层交换耦合。 提供了具有良好磁特性并能够抑制隧道电阻变化率降低的隧道磁阻装置。
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2.发明申请MAGNETORESISTIVE EFFECT DEVICE, MAGNETIC HEAD, AND INFORMATION STORAGE APPARATUS 有权磁阻效应装置，磁头和信息存储装置公开(公告)号：US20100284103A1
公开(公告)日：2010-11-11
申请号：US12842447
申请日：2010-07-23
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01L27/228 , H01L43/10
摘要： A magnetoresistive effect device includes an underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer which are multilayered in this order on a substrate. The underlayer is formed of a metal nitride, and the antiferromagnetic layer is formed of an antiferromagnetic material including Ir and Mn.
摘要翻译： 磁阻效应器件包括在衬底上依次层叠的底层，反铁磁层，第一铁磁层，非磁性层和第二铁磁层。 底层由金属氮化物形成，反铁磁层由包含Ir和Mn的反铁磁材料形成。
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公开(公告)号：US07535755B2
公开(公告)日：2009-05-19
申请号：US11528367
申请日：2006-09-28
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , H01L27/228 , H01L43/12
摘要： The magnetic memory device includes a magnetic shield film 48, and a magnetoresistive effect element 62 formed over the magnetic shield film 48 and including a magnetic layer 52, a non-magnetic layer 54 and a magnetic layer 56, in which a magnetization direction of the first magnetic layer or the second magnetic layer is reversed by spin injection, and a second magnetic shield film 68 formed over the side wall of the magnetoresistive effect element 62. Thus, the arrival of the leakage magnetic field from the interconnection near the magnetoresistive effect element 62 can be effectively prevented.
摘要翻译： 磁存储器件包括磁屏蔽膜48和形成在磁屏蔽膜48上并包括磁性层52，非磁性层54和磁性层56的磁阻效应元件62，其中磁屏蔽膜48的磁化方向 第一磁性层或第二磁性层通过自旋注入反转，以及形成在磁阻效应元件62的侧壁上的第二磁屏蔽膜68.因此，来自磁阻效应元件附近的互连的泄漏磁场的到达 62可以有效地防止。
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公开(公告)号：US20100053824A1
公开(公告)日：2010-03-04
申请号：US12548990
申请日：2009-08-27
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/132 , H01F10/3254
摘要： A magnetoresistive element includes: a free layer made of a ferromagnetic material, the free layer configured to change the direction of magnetization under the influence of an external magnetic field; an insulating layer overlaid on the free layer, the insulating layer made of an insulating material; an amorphous reference layer overlaid on the insulating layer, the amorphous reference layer made of a ferromagnetic material, the amorphous reference layer configured to fix the magnetization in a predetermined direction; a crystal layer overlaid on the amorphous reference layer, the crystal layer containing crystal grains; a non-magnetic layer overlaid on the crystal layer, the non-magnetic layer containing crystal grains having grown from the crystal grains in the crystal layer; and a pinned layer overlaid on the non-magnetic layer, the pinned layer configured to fix the magnetization in a predetermined direction.
摘要翻译： 磁阻元件包括：由铁磁材料制成的自由层，所述自由层被配置为在外部磁场的影响下改变磁化方向; 覆盖在自由层上的绝缘层，由绝缘材料制成的绝缘层; 覆盖在所述绝缘层上的非晶参考层，由铁磁材料制成的所述非晶参考层，所述非晶参考层被配置为沿预定方向固定所述磁化; 覆盖在非晶参考层上的晶体层，含有晶粒的晶体层; 覆盖在所述晶体层上的非磁性层，所述非磁性层含有从所述晶体层中的晶粒生长的晶粒; 以及覆盖在所述非磁性层上的被钉扎层，所述被钉扎层被配置为沿预定方向固定所述磁化。
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公开(公告)号：US20090244790A1
公开(公告)日：2009-10-01
申请号：US12409330
申请日：2009-03-23
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01L43/08 , H01L43/10
摘要： An magnetoresistive element includes: an underlayer made of a nitride; a pinning layer made of an antiferromagnetic layer overlaid on the underlayer, the pinning layer having the close-packed surface in the (111) surface of crystal, the pinning layer setting the (002) surface of crystal in parallel with the surface of the underlayer; a reference layer overlaid on the pinning layer, the reference layer having the magnetization fixed in a predetermined direction based on the exchange coupling with the pinning layer; a nonmagnetic layer overlaid on the reference layer, the nonmagnetic layer made of a nonmagnetic material; and a free layer overlaid on the nonmagnetic layer, the free layer made of a ferromagnetic material, the free layer enabling a change in the direction of the magnetization under the influence of an external magnetic field.
摘要翻译： 磁阻元件包括：由氮化物制成的底层; 由覆盖在底层上的反铁磁层制成的钉扎层，该钉扎层在晶体的（111）表面具有紧密堆积的表面，钉扎层将晶体的（002）表面与底层的表面平行设置 ; 覆盖在钉扎层上的参考层，基于与钉扎层的交换耦合，具有沿预定方向固定的磁化的参考层; 覆盖在参考层上的非磁性层，由非磁性材料制成的非磁性层; 以及覆盖在非磁性层上的自由层，由铁磁材料制成的自由层，该自由层能够在外部磁场的影响下使磁化方向发生变化。
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6.发明申请FERROMAGNETIC TUNNEL JUNCTION ELEMENT, MAGNETIC RECORDING DEVICE AND MAGNETIC MEMORY DEVICE 审中-公开铁磁结构元件，磁记录装置和磁记忆装置公开(公告)号：US20090097170A1
公开(公告)日：2009-04-16
申请号：US12202789
申请日：2008-09-02
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11C11/16 , G11C11/161 , G11C11/1657 , G11C11/1659 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L27/228 , H01L43/10
摘要： A ferromagnetic tunnel junction element is a magnetoresistance effect element wherein an electric resistance varies in accordance with a magnetic field applied. The ferromagnetic tunnel junction element includes a pinned layer wherein at least a part of a magnetization direction is held, and an insulation layer formed on the pinned layer, creating an energy barrier that electrons can flow through by a tunnel effect. A first free layer made of a first ferromagnetic material containing boron atoms, is formed on the insulation layer. In the first free layer, a direction of the magnetization switches under an influence of an external magnetic field. A second free layer made of a first ferromagnetic material containing boron atoms, is formed on the first free layer. The direction of magnetization of the second free layer switches under the influence of the external magnetic field, exchanging and coupling with the first free layer.
摘要翻译： 铁磁隧道结元件是磁阻效应元件，其中电阻根据施加的磁场而变化。 铁磁隧道结元件包括其中保持至少一部分磁化方向的钉扎层和形成在被钉扎层上的绝缘层，产生电子可以通过隧道效应流过的能量势垒。 在绝缘层上形成由含硼原子的第一铁磁材料制成的第一自由层。 在第一自由层中，磁化方向在外部磁场的影响下切换。 在第一自由层上形成由含有硼原子的第一铁磁材料制成的第二自由层。 第二自由层的磁化方向在外部磁场的影响下切换，与第一自由层交换耦合。
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7.发明授权Ferromagnetic tunnel junction, magnetic head using the same, magnetic recording device, and magnetic memory device 失效铁磁隧道结，使用磁头的磁头，磁记录装置和磁记忆装置公开(公告)号：US07466526B2
公开(公告)日：2008-12-16
申请号：US11257397
申请日：2005-10-25
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909
摘要： A ferromagnetic tunnel junction is disclosed. The ferromagnetic tunnel junction includes a pinned magnetic layer, a tunnel insulating film formed on the pinned magnetic layer, and a free magnetic multilayer body formed on the tunnel insulating film. The free magnetic multilayer body includes a first free magnetic layer, a diffusion barrier layer, and a second free magnetic layer stacked in this order on the tunnel insulating film. The first free magnetic layer and the second free magnetic layer are ferromagnetically coupled with each other. The diffusion barrier layer inhibits the additive element contained in the first free magnetic layer from diffusing into the second free magnetic layer.
摘要翻译： 公开了铁磁隧道结。 铁磁隧道结包括钉扎磁性层，形成在钉扎磁性层上的隧道绝缘膜，以及形成在隧道绝缘膜上的自由磁性多层体。 自由磁性多层体包括在隧道绝缘膜上依次堆叠的第一自由磁性层，扩散阻挡层和第二自由磁性层。 第一自由磁性层和第二自由磁性层彼此铁磁耦合。 扩散阻挡层抑制包含在第一自由磁性层中的添加元素扩散到第二自由磁性层中。
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8.发明申请Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device 审中-公开隧道磁阻（TMR）器件，其制造方法，磁头和使用TMR器件的磁存储器公开(公告)号：US20080112093A1
公开(公告)日：2008-05-15
申请号：US11899486
申请日：2007-09-06
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01L43/08 , H01L43/12 , Y10T428/1114
摘要： A barrier layer is disposed over a pinned layer made of ferromagnetic material having a fixed magnetization direction, the barrier layer having a thickness allowing electrons to transmit therethrough by a tunneling phenomenon. A first free layer is disposed over the barrier layer, the first free layer being made of amorphous or fine crystalline soft magnetic material which changes a magnetization direction under an external magnetic field. A second free layer is disposed over the first free layer, the second free layer being made of crystalline soft magnetic material which changes a magnetization direction under an external magnetic field and being exchange-coupled to the first free layer. A tunneling magnetoresistance device is provided which has good magnetic characteristics and can suppress a tunnel resistance change rate from being lowered.
摘要翻译： 阻挡层设置在由具有固定的磁化方向的铁磁材料制成的被钉扎层上，阻挡层具有允许电子通过隧道现象透过的厚度。 第一自由层设置在阻挡层上，第一自由层由在外部磁场下改变磁化方向的非晶或细晶体软磁材料制成。 第二自由层设置在第一自由层之上，第二自由层由结晶软磁材料制成，其在外部磁场下改变磁化方向并与第一自由层交换耦合。 提供了具有良好磁特性并能够抑制隧道电阻变化率降低的隧道磁阻装置。
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公开(公告)号：US20070241410A1
公开(公告)日：2007-10-18
申请号：US11528367
申请日：2006-09-28
CPC分类号： H01L43/08 , B82Y10/00 , H01L27/228 , H01L43/12
摘要： The magnetic memory device includes a magnetic shield film 48, and a magnetoresistive effect element 62 formed over the magnetic shield film 48 and including a magnetic layer 52, a non-magnetic layer 54 and a magnetic layer 56, in which a magnetization direction of the first magnetic layer or the second magnetic layer is reversed by spin injection, and a second magnetic shield film 68 formed over the side wall of the magnetoresistive effect element 62. Thus, the arrival of the leakage magnetic field from the interconnection near the magnetoresistive effect element 62 can be effectively prevented.
摘要翻译： 磁存储器件包括磁屏蔽膜48和形成在磁屏蔽膜48上并包括磁性层52，非磁性层54和磁性层56的磁阻效应元件62，其中磁屏蔽膜48的磁化方向 第一磁性层或第二磁性层通过自旋注入反转，以及形成在磁阻效应元件62的侧壁上的第二磁屏蔽膜68。 因此，可以有效地防止来自磁阻效应元件62附近的布线的泄漏磁场的到达。
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10.发明授权Magnetoresistive effect device including a nitride underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer which are multilayered in this order on a substrate, magnetic head including the same magnetoresistive effect device, and information storage apparatus including the same magnetic head 有权包括在基板上依次层叠的氮化物底层，反铁磁层，第一铁磁层，非磁性层和第二铁磁性层的磁阻效应器件，以及包括同一磁阻效应器件的磁头以及包括该磁阻效应器件的信息存储设备 相同的磁头公开(公告)号：US08194362B2
公开(公告)日：2012-06-05
申请号：US12842447
申请日：2010-07-23
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01L27/228 , H01L43/10
摘要： A magnetoresistive effect device includes an underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer which are multilayered in this order on a substrate. The underlayer is formed of a metal nitride, and the antiferromagnetic layer is formed of an antiferromagnetic material including Ir and Mn.
摘要翻译： 磁阻效应器件包括在衬底上依次层叠的底层，反铁磁层，第一铁磁层，非磁性层和第二铁磁层。 底层由金属氮化物形成，反铁磁层由包含Ir和Mn的反铁磁材料形成。
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