发明授权
- 专利标题: Semiconductor apparatus
- 专利标题(中): 半导体装置
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申请号: US12636758申请日: 2009-12-13
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公开(公告)号: US08184463B2公开(公告)日: 2012-05-22
- 发明人: Makoto Saen , Kenichi Osada , Masanao Yamaoka , Tomonori Sekiguchi
- 申请人: Makoto Saen , Kenichi Osada , Masanao Yamaoka , Tomonori Sekiguchi
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Miles and Stockbridge P.C.
- 优先权: JP2008-322224 20081218
- 主分类号: G11C5/06
- IPC分类号: G11C5/06 ; G11C7/00 ; H01L23/48 ; H01L23/52
摘要:
The need for mediation operation is eliminated by adoption of a connection topology in which a circuit for executing one transmission (TR—00T), and a circuit for executing a plurality of receptions (TR—10R, TR—20R, TR—30R) are connected to one penetration-electrode group (for example, TSVGL—0). In order to implement the connection topology even in the case of piling up a plurality of LSIs one after another, in particular, a programmable memory element for designating respective penetration-electrode ports for use in transmit, or for us in receive, and address allocation of the respective penetration-electrode ports is mounted in stacked LSIs.
公开/授权文献
- US20100155921A1 SEMICONDUCTOR APPARATUS 公开/授权日:2010-06-24
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