发明授权
- 专利标题: Crystalline chromium alloy deposit
- 专利标题(中): 结晶铬合金沉积物
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申请号: US12244327申请日: 2008-10-02
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公开(公告)号: US08187448B2公开(公告)日: 2012-05-29
- 发明人: Agnes Rousseau , Craig V. Bishop
- 申请人: Agnes Rousseau , Craig V. Bishop
- 申请人地址: DE Berlin
- 专利权人: Atotech Deutschland GmbH
- 当前专利权人: Atotech Deutschland GmbH
- 当前专利权人地址: DE Berlin
- 代理机构: Renner, Otto, Boisselle & Sklar
- 主分类号: C25D3/56
- IPC分类号: C25D3/56 ; C25D3/04 ; C25D3/06 ; C25D3/10
摘要:
An electrodeposited crystalline functional chromium deposit which is nanogranular as deposited, and the deposit may be both TEM and XRD crystalline or may be TEM crystalline and XRD amorphous. In various embodiments, the deposit includes one or any combination of two or more of an alloy of chromium, carbon, nitrogen, oxygen and sulfur; a {111} preferred orientation; an average crystal grain cross-sectional area of less than about 500 nm2; and a lattice parameter of 2.8895+/−0.0025 A. A process and an electrodeposition bath for electrodepositing the nanogranular crystalline functional chromium deposit on a substrate, including providing the electrodeposition bath including trivalent chromium, a source of divalent sulfur, a carboxylic acid, a source of nitrogen and being substantially free of hexavalent chromium; immersing a substrate in the bath; and applying an electrical current to electrodeposit the deposit on the substrate.
公开/授权文献
- US20090114544A1 CRYSTALLINE CHROMIUM ALLOY DEPOSIT 公开/授权日:2009-05-07
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