发明授权
- 专利标题： Direct contact in trench with three-mask shield gate process
- 专利标题（中）： 直接接触沟槽与三屏蔽屏蔽门工艺
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申请号： US12565611申请日： 2009-09-23
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公开(公告)号： US08187939B2公开(公告)日： 2012-05-29
- 发明人: Sung-Shan Tai , Hamza Yilmaz , Anup Bhalla , Hong Chang , John Chen
- 申请人： Sung-Shan Tai , Hamza Yilmaz , Anup Bhalla , Hong Chang , John Chen
- 申请人地址： US CA Sunnyvale
- 专利权人： Alpha & Omega Semiconductor Incorporated
- 当前专利权人： Alpha & Omega Semiconductor Incorporated
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： JDI Patent
- 代理商 Joshua D. Isenberg
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/66
摘要：
A semiconductor device and a method for making a semiconductor device are disclosed. A trench mask may be applied to a semiconductor substrate, which is etched to form trenches with three different widths. A first conductive material is formed at the bottom of the trenches. A second conductive material is formed over the first conductive material. An insulator layer separates the first and second conductive materials. A first insulator layer is deposited on top of the trenches. A body layer is formed in a top portion of the substrate. A source is formed in the body layer. A second insulator layer is applied on top of the trenches and the source. A contact mask is applied on top of the second insulator layer. Source and gate contacts are formed through the second insulator layer. Source and gate metal are formed on top of the second insulator layer.