发明授权
- 专利标题： Hybrid gap-fill approach for STI formation
- 专利标题（中）： 混合间隙填充方法用于STI形成
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申请号： US12032962申请日： 2008-02-18
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公开(公告)号： US08187948B2公开(公告)日： 2012-05-29
- 发明人: Neng-Kuo Chen , Chih-Hsiang Chang , Kuo-Hwa Tzeng , Cheng-Yuan Tsai
- 申请人： Neng-Kuo Chen , Chih-Hsiang Chang , Kuo-Hwa Tzeng , Cheng-Yuan Tsai
- 申请人地址： unknown Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： unknown Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A method of forming a shallow trench isolation region is provided. The method includes providing a semiconductor substrate comprising a top surface; forming an opening extending from the top surface into the semiconductor substrate; performing a conformal deposition method to fill a dielectric material into the opening; performing a first treatment on the dielectric material, wherein the first treatment provides an energy high enough for breaking bonds in the dielectric material; and performing a steam anneal on the dielectric material.
公开/授权文献
- US20090209083A1 Hybrid Gap-fill Approach for STI Formation 公开/授权日：2009-08-20
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