Invention Grant
US08188469B2 Test device and a semiconductor integrated circuit device 有权
测试装置和半导体集成电路装置

Test device and a semiconductor integrated circuit device
Abstract:
A test device includes a semiconductor substrate having a first test region and a second test region defined thereon, wherein a layout of the first test region includes first active regions separated from each other by isolation regions in the semiconductor substrate, second active regions formed between the first active regions, first gate lines formed on the semiconductor substrate, wherein each of the first gate lines has a first end adjacent to one of the first active regions and a second end adjacent to an end of one of the second active regions, respectively, first shared contacts each formed over a respective one of the second ends of the first gate lines and an upper part of one of the first active regions, and first nodes formed on the first shared contacts to be electrically connected to the first shared contacts, respectively.
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