发明授权
US08188532B2 Semiconductor device having a gate contact structure capable of reducing interfacial resistance
有权
具有能够降低界面电阻的栅极接触结构的半导体器件
- 专利标题： Semiconductor device having a gate contact structure capable of reducing interfacial resistance
- 专利标题（中）： 具有能够降低界面电阻的栅极接触结构的半导体器件
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申请号： US12856295申请日： 2010-08-13
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公开(公告)号： US08188532B2公开(公告)日： 2012-05-29
- 发明人: Chang-Seok Kang , Yoo-Cheol Shin , Jung-Dal Choi , Jong-Sun Sel , Ju-Hyung Kim , Sang-Hun Jeon
- 申请人： Chang-Seok Kang , Yoo-Cheol Shin , Jung-Dal Choi , Jong-Sun Sel , Ju-Hyung Kim , Sang-Hun Jeon
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR2006-40121 20060503
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A semiconductor device has a gate contact structure, including a semiconductor substrate, a polycrystalline silicon layer used as a gate electrode of a transistor, a middle conductive layer, a top metal layer having an opening exposing the polycrystalline silicon layer, and a contact plug directly contacting the polycrystalline silicon layer through the opening.
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