发明授权
- 专利标题： Semiconductor device and method of manufacturing semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12654620申请日： 2009-12-24
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公开(公告)号： US08188538B2公开(公告)日： 2012-05-29
- 发明人: Yuki Nakano , Ryota Nakamura
- 申请人： Yuki Nakano , Ryota Nakamura
- 申请人地址： JP Kyoto
- 专利权人： Rohm Co., Ltd.
- 当前专利权人： Rohm Co., Ltd.
- 当前专利权人地址： JP Kyoto
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JP2008-330318 20081225; JP2008-334480 20081226; JP2009-293362 20091224
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
The semiconductor device according to the present invention includes: a semiconductor layer of a first conductivity type made of SiC having an Si surface; a gate trench dug down from the surface of the semiconductor layer; a gate insulating film formed on a bottom surface and a side surface of the gate trench so that the ratio of the thickness of a portion located on the bottom surface to the thickness of a portion located on the side surface is 0.3 to 1.0; and a gate electrode embedded in the gate trench through the gate insulating film.
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