利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.018 秒)

    DIGITAL AV DEVICE, SETTING DATA COPY JIG, AND SETTING DATA COPY METHOD
    2.
    发明申请
    DIGITAL AV DEVICE, SETTING DATA COPY JIG, AND SETTING DATA COPY METHOD 审中-公开
    数字AV设备，设置数据复制和设置数据复制方法

    公开(公告)号：US20100322595A1

    公开(公告)日：2010-12-23

    申请号：US12795033

    申请日：2010-06-07

    申请人： Yutaka Kitamori ,  Ryota Nakamura

    发明人： Yutaka Kitamori ,  Ryota Nakamura

    IPC分类号： H04N7/26

    CPC分类号： G09G5/003 ,  G09G5/006 ,  G09G2320/08 ,  G09G2370/047 ,  G09G2370/12 ,  H04N5/44 ,  H04N21/43635 ,  H04N21/4402 ,  H04N21/4882

    摘要： A setting data copy method includes: HDMI-connecting a copy source digital AV device and a copy destination digital AV device of the same type as a type of the copy source digital AV device; sending, by the copy source digital AV device, at least part of setting data of the copy source digital AV device to the copy destination digital AV device by using a CEC command; and updating, by the copy destination digital AV device, setting data of the copy destination digital AV device based on the at least part of the setting data received from the copy source digital AV device.

    摘要翻译： 设置数据复制方法包括：HDMI复制源数字AV设备和与复制源数字AV设备的类型相同类型的复制目的地数字AV设备的HDMI连接; 由复制源数字AV设备通过使用CEC命令将复制源数字AV设备的设置数据的至少一部分发送到复制目的地数字AV设备; 以及通过复制目的地数字AV设备，基于从复制源数字AV设备接收的设置数据的至少一部分来更新复制目的地数字AV设备的设置数据。

    SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20130306983A1

    公开(公告)日：2013-11-21

    申请号：US13983051

    申请日：2012-02-01

    申请人： Yuki Nakano ,  Ryota Nakamura

    发明人： Yuki Nakano ,  Ryota Nakamura

    IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L27/088

    CPC分类号： H01L29/063 ,  H01L21/046 ,  H01L27/088 ,  H01L29/045 ,  H01L29/0607 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1037 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66666 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827

    摘要： A semiconductor device according to the present invention includes a semiconductor layer made of a wide bandgap semiconductor having a gate trench provided with a sidewall and a bottom wall, a gate insulating film formed on the sidewall and the bottom wall of the gate trench, and a gate electrode embedded in the gate trench to be opposed to the semiconductor layer through the gate insulating film, while the semiconductor layer includes a first conductivity type source region formed to be exposed on the side of a front surface of the semiconductor layer for partially forming the sidewall of the gate trench, a second conductivity type body region formed on a side of the source region closer to a rear surface of the semiconductor layer to be in contact with the source region for partially forming the sidewall of the gate trench, a first conductivity type drift region formed on a side of the body region closer to the rear surface of the semiconductor layer to be in contact with the body region for forming the bottom wall of the gate trench, and a second conductivity type first breakdown voltage holding region selectively formed on an edge portion of the gate trench where the sidewall and the bottom wall intersect with each other in a partial region of the gate trench.

    摘要翻译： 根据本发明的半导体器件包括由具有设置有侧壁和底壁的栅极沟槽的宽带隙半导体制成的半导体层，形成在栅极沟槽的侧壁和底壁上的栅极绝缘膜，以及 栅极电极嵌入栅极沟槽中，以通过栅极绝缘膜与半导体层相对，而半导体层包括形成为暴露在半导体层的前表面侧的第一导电型源极区域，以部分地形成 所述栅极沟槽的侧壁，形成在所述源极区域的靠近所述半导体层的后表面的与所述源极区域接触以用于部分地形成所述栅极沟槽的侧壁的第二导电类型体区域，第一导电性 类型漂移区域形成在身体区域更靠近半导体层的后表面的一侧以与身体re接触 用于形成栅极沟槽的底壁的第一导电类型的第一导电类型的第一击穿电压保持区域，以及选择性地形成在栅极沟槽的边缘部分上的第二导电类型的第一击穿电压保持区域，其中所述侧壁和底壁在栅极沟槽的部分区域中彼此相交 。

    GOLF BALL
    6.
    发明申请
    GOLF BALL 审中-公开
    高尔夫球

    公开(公告)号：US20130296073A1

    公开(公告)日：2013-11-07

    申请号：US13461203

    申请日：2012-05-01

    申请人： Ryota NAKAMURA ,  Akira KIMURA ,  Toru OGAWANA

    发明人： Ryota NAKAMURA ,  Akira KIMURA ,  Toru OGAWANA

    IPC分类号： A63B37/06

    CPC分类号： A63B37/0081 ,  A63B37/0003 ,  A63B37/0018 ,  A63B37/0051 ,  A63B37/0063 ,  A63B37/0064 ,  A63B37/0076 ,  A63B37/008 ,  A63B37/0083 ,  A63B37/0092 ,  A63B37/0096

    摘要： The invention provides a golf ball having a core and a cover of at least one layer. The core has a cross-sectional hardness which, letting D (mm) be the radius of the core, O be the JIS-C hardness at a center of the core, P be the JIS-C hardness at a position 25% of D from the core center, Q be the JIS-C hardness at a position 55% of D mm from the core center, and T be the JIS-C hardness at a position 85% of D from the core center, satisfies the formulas (1) P−O≦4, (2) Q−O≦5, and (3) T−Q≧10.

    摘要翻译： 本发明提供了一种具有至少一层的芯和盖的高尔夫球。 芯具有截面硬度，D（mm）为芯的半径，O为芯的中心处的JIS-C硬度，P为D的25％的JIS-C硬度 从核心中心，Q为从芯心的D mm的位置的55％的JIS-C硬度，T为来自芯心的D的位置的85％的JIS-C硬度，满足式（1 ）PO @ 4，（2）QO @ 5和（3）TQ> = 10。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09136322B2

    公开(公告)日：2015-09-15

    申请号：US13983051

    申请日：2012-02-01

    申请人： Yuki Nakano ,  Ryota Nakamura

    发明人： Yuki Nakano ,  Ryota Nakamura

    IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L27/088 ,  H01L29/08 ,  H01L29/417 ,  H01L29/16

    CPC分类号： H01L29/063 ,  H01L21/046 ,  H01L27/088 ,  H01L29/045 ,  H01L29/0607 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1037 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66666 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827

    摘要： A semiconductor device includes a semiconductor layer made of a wide bandgap semiconductor and including a gate trench; a gate insulating film formed on the gate trench; and a gate electrode embedded in the gate trench to be opposed to the semiconductor layer through the gate insulating film. The semiconductor layer includes a first conductivity type source region; a second conductivity type body region; a first conductivity type drift region; a second conductivity type first breakdown voltage holding region; a source trench passing through the first conductivity type source region and the second conductivity type body region from the front surface and reaching a drain region; and a second conductivity type second breakdown voltage region selectively formed on an edge portion of the source trench where the sidewall and the bottom wall thereof intersect with each other in a parallel region of the source trench.

    摘要翻译： 半导体器件包括由宽带隙半导体制成并包括栅极沟槽的半导体层; 栅极绝缘膜形成在栅极沟槽上; 以及嵌入栅极沟槽中以通过栅极绝缘膜与半导体层相对的栅电极。 半导体层包括第一导电型源区; 第二导电类型体区; 第一导电型漂移区; 第二导电类型的第一击穿电压保持区域; 源极沟槽，其从前表面穿过第一导电类型源极区域和第二导电类型体区域并到达漏极区域; 以及选择性地形成在源沟槽的边缘部分上的第二导电类型的第二击穿电压区域，其中侧壁和底壁在源沟槽的平行区域中彼此相交。