发明授权
US08188789B2 Apparatus for improving performance at low power region in a Doherty amplifier
有权
用于改善Doherty放大器低功率区域性能的装置
- 专利标题: Apparatus for improving performance at low power region in a Doherty amplifier
- 专利标题(中): 用于改善Doherty放大器低功率区域性能的装置
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申请号: US13035086申请日: 2011-02-25
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公开(公告)号: US08188789B2公开(公告)日: 2012-05-29
- 发明人: Young-Yoon Woo , Han-Seok Kim , Dong-Geun Lee , Bum-Man Kim , Jung-Hwan Moon
- 申请人: Young-Yoon Woo , Han-Seok Kim , Dong-Geun Lee , Bum-Man Kim , Jung-Hwan Moon
- 申请人地址: KR Suwon-si KR Gyeongbuk
- 专利权人: Samsung Electronics Co., Ltd.,Postech Academy-Industry Foundation
- 当前专利权人: Samsung Electronics Co., Ltd.,Postech Academy-Industry Foundation
- 当前专利权人地址: KR Suwon-si KR Gyeongbuk
- 优先权: KR10-2010-0016997 20100225
- 主分类号: H03F3/68
- IPC分类号: H03F3/68
摘要:
A method and apparatus improve the performance of a carrier amplifier in a Doherty amplifier. The Doherty amplifier includes a power divider, a carrier amplifier, at least one peaking amplifier, offset lines, and a Doherty circuit. The power divider provides a power signal to each of the carrier amplifier and the at least one peaking amplifier. The carrier amplifier amplifies power of a signal inputted from the power divider. The at least one peaking amplifier amplifies power of a signal inputted from the power divider. The offset lines control a load impedance when the at least one peaking amplifier does not operate. When the at least one peaking amplifier does not operate, the Doherty circuit generates the load impedance of the carrier amplifier that is larger than twice a load impedance at the maximum output power of the carrier amplifier.
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