Invention Grant
- Patent Title: Stacked structure and production method thereof
- Patent Title (中): 堆叠结构及其制造方法
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Application No.: US10565621Application Date: 2004-07-15
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Publication No.: US08193069B2Publication Date: 2012-06-05
- Inventor: Hubert Moriceau , Bernard Aspar , Jacques Margail
- Applicant: Hubert Moriceau , Bernard Aspar , Jacques Margail
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Brinks Hofer Gilson & Lione
- Priority: FR0308865 20030721
- International Application: PCT/FR2004/001858 WO 20040715
- International Announcement: WO2005/019094 WO 20050303
- Main IPC: H01L21/76
- IPC: H01L21/76

Abstract:
The invention relates to a method of producing a stacked structure. The inventive method comprises the following steps consisting in: a) using a first plate (1) which is, for example, made from silicon, and a second plate (5) which is also, for example, made from silicon, such that at least one of said first (1) and second (5) plates has, at least in part, a surface (2; 7) that cannot bond to the other plate; b) providing a surface layer (3; 8), which is, for example, made from silicon oxide, on at least one part of the surface (2) of the first plate and/or the surface (7) of the second plate (5); and c) bonding the two plates (1; 5) to one another. The aforementioned bonding incompatibility can, for example, result from the physicochemical nature of the surface or of a coating applied thereto, or from a roughness value (r′2, r′7) which is greater than a predetermined threshold. The invention also relates to a stacked structure produced using the inventive method.
Public/Granted literature
- US20060281212A1 Stacked structure and production method thereof Public/Granted day:2006-12-14
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